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MPSW45AG

Onsemi

MPSW45AG by Onsemi

MPSW45AG by Onsemi is a NPN Darlington BJT with hFE of 4000, VCE of 50V, and IC of 1A. Ideal for amplifier applications due to its high gain and temperature resistance up to 150°C. Its cylindrical package with through-hole terminals makes it suitable for various electronic designs.

Median Price

$0.115

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Nova Conductors

Japan . 300 parts In-Stock

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$0.115

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Chip Stock

USA . 29,000 parts In-Stock

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Vyrian

USA . 9,100 parts In-Stock

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Digiode

USA . 2,214 parts In-Stock

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R&J Components

USA . 45 parts In-Stock

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45

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Distributors (Availability)

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Corohmni

South Africa . 189 parts In-Stock

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$0.113

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Continental Prestige Electronics

USA . 4,679 parts In-Stock

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Argo Parts USA

USA . 3,010 parts In-Stock

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$0.112

3,010

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Netroflash

USA . 500 parts In-Stock

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AZTECH Wire

Italy . 799 parts In-Stock

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$14.371

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Ampacity Inc.

Singapore . 420 parts In-Stock

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$16.050

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Perfect Parts

USA . 22,756 parts In-Stock

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Kepictronics

USA . 7,000 parts In-Stock

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TANS Electronics

Latvia . 5,715 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,700 parts In-Stock

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SupplyDigital Components

Austria . 5,684 parts In-Stock

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Kulean Microsystems

USA . 2,541 parts In-Stock

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Corphita

USA . 2,177 parts In-Stock

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UHIMA Technologies

Türkiye . 587 parts In-Stock

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Problanco Electronics

Mexico . 476 parts In-Stock

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Overview

Enhance your electronic projects with the MPSW45AG from Onsemi, a high-quality Small Signal Bipolar Junction Transistor designed for amplification applications. Manufactured by Onsemi, known for their reliable components, this NPN Darlington transistor offers a maximum collector-emitter voltage of 50V and a minimum DC current gain of 4000. With a peak reflow temperature of 260°C and a nominal transition frequency of 100MHz, this transistor ensures optimal performance and durability. Upgrade your amplifier circuits today with the MPSW45AG, offering customers unmatched value and superior functionality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy package body material makes the transistor lightweight and durable, suitable for various applications.

Polarity or Channel Type: NPN

NPN type transistors are commonly used in amplification circuits, making this product suitable for amplifier applications.

Configuration: DARLINGTON

The Darlington configuration provides high current gain and is ideal for applications requiring high amplification.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and efficiency in signal amplification.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures and continue to function reliably.

Maximum Collector-Emitter Voltage: 50 V

The high maximum collector-emitter voltage rating allows for flexibility in various circuit designs and applications.

Maximum Collector Current (IC): 1 A

With a high maximum collector current rating, this transistor can handle relatively high currents, making it suitable for power applications.

Nominal Transition Frequency (fT): 100 MHz

The high nominal transition frequency indicates the speed at which the transistor can switch, making it suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSW45AG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

4000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSW45AG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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