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MPSW01RLRP

Onsemi

MPSW01RLRP by Onsemi

MPSW01RLRP by Onsemi is a NPN BJT with hFE of 50, VCEO of 30V, and IC of 1A. Ideal for low-power applications in electronics due to its high transition frequency of 50MHz. Its through-hole package makes it suitable for various circuit designs requiring a single NPN transistor.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 809 parts In-Stock

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Digiode

USA . 759 parts In-Stock

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Kulean Microsystems

USA . 8,225 parts In-Stock

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Problanco Electronics

Mexico . 7,572 parts In-Stock

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TANS Electronics

Latvia . 6,945 parts In-Stock

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SupplyDigital Components

Austria . 6,835 parts In-Stock

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Corphita

USA . 2,331 parts In-Stock

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UHIMA Technologies

Türkiye . 465 parts In-Stock

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Corohmni

South Africa . 197 parts In-Stock

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Overview

Discover the power of the MPSW01RLRP by Onsemi, a high-quality Small Signal Bipolar Junction Transistor designed to deliver exceptional performance in a variety of applications. With Onsemi's reputation for excellence in manufacturing, this NPN transistor offers reliability and precision like no other. Whether you're in need of amplification, switching, or signal processing, this transistor's single configuration and 1A maximum collector current provide unmatched value and versatility. Trust Onsemi to provide the solution you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring durability and reliability in various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering versatility and compatibility with many applications.

Minimum DC Current Gain (hFE): 50

Higher current gain allows for better amplification performance, making this transistor suitable for applications requiring gain in signal processing.

Maximum Operating Temperature: 150 °C

With a high operating temperature, this transistor can withstand heat and thermal stress, ensuring stable performance in demanding environments.

Maximum Collector-Emitter Voltage: 30 V

Capable of handling relatively high voltages, this transistor is suitable for applications that require voltage amplification and control.

Maximum Collector Current (IC): 1 A

With a high collector current rating, this transistor can handle substantial current flow, making it ideal for power applications requiring high current levels.

Nominal Transition Frequency (fT): 50 MHz

The high transition frequency allows for efficient switching and amplification of high-frequency signals, making this transistor suitable for RF and high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSW01RLRP attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSW01RLRP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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