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MPSW01A

Onsemi

MPSW01A by Onsemi

The Onsemi MPSW01A is a NPN BJT transistor with a max collector-emitter voltage of 40V and max current of 1A. With a min hFE of 50 and fT of 50MHz, it's ideal for low-power applications in electronics requiring high gain and frequency response. The through-hole package makes it suitable for PCB mounting in various electronic circuits.

Median Price

$1.770

Lifecycle Status

Suppliers In-Stock

25

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Master Electronics

USA . 2,949 parts In-Stock

1+ parts

-

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$1.570

1k+ parts

$0.320

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$0.220

2,949

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$1.570

$0.320

$0.220

Verical

USA . 2,900 parts In-Stock

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$1.970

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$0.381

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$0.340

2,900

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$1.970

$0.381

$0.340

Distributors (In-Stock)

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Component Electronics Inc.

Canada . 427 parts In-Stock

1+ parts

$0.120

100+ parts

$0.090

1k+ parts

$0.080

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427

$0.120

$0.090

$0.080

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American Microsemiconductor Inc.

USA . 300 parts In-Stock

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$1.000

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$1.000

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Vyrian

USA . 1,572 parts In-Stock

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$1.570

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$1.570

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Chip Stock

USA . 24,000 parts In-Stock

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Lakeview Electronics

USA . 8,456 parts In-Stock

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Legend Electronics Inc.

USA . 5,840 parts In-Stock

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5,840

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Connector Distribution Corp

USA . 4,000 parts In-Stock

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4,000

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Right Parts Inc.

USA . 4,000 parts In-Stock

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4,000

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Bristol Electronics

USA . 3,389 parts In-Stock

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3,389

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Atlantic Semiconductor

USA . 3,389 parts In-Stock

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3,389

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Standard Data Resources

USA . 2,743 parts In-Stock

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Anansix

USA . 2,095 parts In-Stock

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Inland Empire Components Inc.

USA . 1,405 parts In-Stock

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1,405

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M&R Communications

USA . 1,108 parts In-Stock

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A2Z Electronics, Inc.

USA . 479 parts In-Stock

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479

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Executive Electronics, Inc.

USA . 283 parts In-Stock

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283

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Digiode

USA . 206 parts In-Stock

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First Choice Components Inc.

USA . 127 parts In-Stock

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Pride Electronics

USA . 101 parts In-Stock

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R&J Components

USA . 50 parts In-Stock

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PC Components Company LLC

USA . 48 parts In-Stock

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Sunrise Surplus Inc.

USA . 14 parts In-Stock

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LittleDiode

UK . 3 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 341 parts In-Stock

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$0.120

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Problanco Electronics

Mexico . 7,397 parts In-Stock

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TANS Electronics

Latvia . 6,766 parts In-Stock

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SupplyDigital Components

Austria . 5,330 parts In-Stock

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Kulean Microsystems

USA . 3,567 parts In-Stock

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Corphita

USA . 363 parts In-Stock

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UHIMA Technologies

Türkiye . 310 parts In-Stock

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Perfect Parts

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Overview

Elevate your electronic designs with the MPSW01A from Onsemi, a top-quality Small Signal Bipolar Junction Transistor (BJT) that boasts unmatched performance and reliability. Manufactured by Onsemi, a renowned industry leader, this NPN transistor offers exceptional value and benefits to customers seeking seamless integration in a variety of applications. From amplifiers to switching circuits, this single configuration transistor provides superior functionality with a maximum power dissipation of 0.625 W and a nominal transition frequency of 50 MHz. Trust the MPSW01A for all your transistor needs and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor.

Polarity or Channel Type: NPN

Common type of BJT which is suitable for a wide range of applications.

Configuration: SINGLE

Simplifies the circuit design and integration.

Package Shape: ROUND

Allows for easy mounting and installation.

Terminal Form: THROUGH-HOLE

Facilitates soldering and connection process.

Maximum Power Dissipation (Abs): 0.625 W

Can handle a moderate amount of power without overheating.

Package Style (Meter): CYLINDRICAL

Provides a compact form factor for space-constrained applications.

Minimum DC Current Gain (hFE): 50

Ensures reliable and consistent amplification of current.

Maximum Operating Temperature: 150 °C

Can operate effectively in a wide range of temperatures.

Maximum Collector-Emitter Voltage: 40 V

Suitable for applications with lower voltage requirements.

Transistor Element Material: SILICON

Offers high performance and stability.

Maximum Collector Current (IC): 1 A

Capable of handling moderate to high current loads.

Terminal Finish: TIN LEAD

Provides good solderability and electrical conductivity.

Terminal Position: BOTTOM

Facilitates easy PCB layout and connection.

Peak Reflow Temperature °C: 235

Can withstand high-temperature reflow soldering processes.

Nominal Transition Frequency (fT): 50 MHz

Suitable for high-frequency applications such as RF amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSW01A attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSW01A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-138-3341, 5961011383341

NIIN

011383341

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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