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MPSW01AZL1

Onsemi

MPSW01AZL1 by Onsemi

MPSW01AZL1 by Onsemi is a NPN BJT with hFE of 50, VCEO of 40V, and IC of 1A. Ideal for low-power applications in electronics due to its high transition frequency of 50MHz and operating temperature up to 150 °C. This through-hole transistor comes in a cylindrical package suitable for various circuit configurations.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

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Vyrian

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SupplyDigital Components

Austria . 4,802 parts In-Stock

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TANS Electronics

Latvia . 3,819 parts In-Stock

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Kulean Microsystems

USA . 1,721 parts In-Stock

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Corphita

USA . 1,532 parts In-Stock

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Problanco Electronics

Mexico . 1,085 parts In-Stock

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Corohmni

South Africa . 279 parts In-Stock

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UHIMA Technologies

Türkiye . 198 parts In-Stock

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Overview

Enhance your electronic designs with the MPSW01AZL1 by Onsemi, a high-quality NPN BJT transistor that offers reliable performance and versatility. Manufactured by Onsemi, a trusted leader in semiconductor technology, this transistor is ideal for a variety of applications in amplification, switching, and more. With a maximum collector current of 1A and a nominal transition frequency of 50MHz, this transistor delivers exceptional value and benefits to customers looking for a dependable solution for their projects. Upgrade your designs with the MPSW01AZL1 and experience the superior quality and performance that Onsemi is known for.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy packaging offers good protection against external elements, making the transistor durable and reliable for long-term use.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product suitable for a wide range of electronic applications.

Configuration: SINGLE

Single configuration transistors are easy to work with and integrate into circuits, simplifying the design process.

Package Shape: ROUND

Round package shape allows for easy assembly and mounting in circuit boards, optimizing space usage.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical stability and easy soldering, ensuring a secure connection in electronic assemblies.

No. of Terminals: 3

Three terminals allow for versatile connectivity options in circuits, offering flexibility in circuit design.

Package Style: CYLINDRICAL

Cylindrical package style enhances the thermal performance of the transistor, improving overall operational efficiency.

Minimum DC Current Gain (hFE): 50

A higher DC current gain ensures better amplification capabilities, making this transistor suitable for a wide range of signal amplification applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperature environments, ensuring reliable performance in tough conditions.

Maximum Collector-Emitter Voltage: 40 V

A maximum collector-emitter voltage of 40V allows for use in a variety of voltage applications, making this transistor versatile and practical.

Transistor Element Material: SILICON

Silicon transistors offer high efficiency and low noise, providing excellent performance in electronic circuits.

Maximum Collector Current (IC): 1 A

With a maximum collector current of 1A, this transistor can handle relatively high current loads, making it suitable for power applications.

Terminal Finish: TIN LEAD

Tin lead terminal finish ensures good solderability, making it easy to connect the transistor in electronic assemblies.

Terminal Position: BOTTOM

Bottom terminal position makes it easier to mount and connect the transistor securely in electronic circuits, enhancing overall reliability.

Nominal Transition Frequency (fT): 50 MHz

With a nominal transition frequency of 50MHz, this transistor offers excellent high-frequency performance, ideal for RF and switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSW01AZL1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSW01AZL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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