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MPSW01ZL1

Onsemi

MPSW01ZL1 by Onsemi

MPSW01ZL1 by Onsemi is a NPN BJT transistor with hFE of 50, VCEO of 30V, and IC of 1A. Ideal for applications requiring high-speed switching in electronic circuits. Package style: Cylindrical, terminals: Through-hole, making it suitable for various electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,263 parts In-Stock

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Vyrian

USA . 684 parts In-Stock

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Problanco Electronics

Mexico . 4,479 parts In-Stock

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Corphita

USA . 1,669 parts In-Stock

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TANS Electronics

Latvia . 1,365 parts In-Stock

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SupplyDigital Components

Austria . 1,311 parts In-Stock

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UHIMA Technologies

Türkiye . 885 parts In-Stock

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Corohmni

South Africa . 393 parts In-Stock

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Kulean Microsystems

USA . 372 parts In-Stock

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Overview

Enhance your electronic projects with the MPSW01ZL1 by Onsemi. Manufactured by a reputable company known for its superior quality products, this Small Signal Bipolar Junction Transistor (BJT) offers reliability and efficiency. Ideal for a variety of applications, this NPN transistor provides high performance in a compact package. With a minimum DC current gain of 50 and a maximum operating temperature of 150 °C, this product delivers exceptional value and benefits to customers seeking a dependable solution for their circuit design needs. Trust Onsemi to provide you with the tools you need to bring your creations to life.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the package lightweight and durable, ensuring a longer lifespan for the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for a wide range of applications.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making it easy to use in various electronic devices.

Package Shape: ROUND

The round shape of the package allows for easy mounting and placement on circuit boards, saving space and facilitating assembly.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a sturdy connection to the circuit board, ensuring reliable performance and ease of soldering.

No. of Terminals: 3

Having 3 terminals allows for flexibility in circuit configurations and connections, making it versatile for different applications.

Package Style (Meter): CYLINDRICAL

The cylindrical package style is compact and efficient, suitable for applications where space is limited.

Minimum DC Current Gain (hFE): 50

A minimum DC current gain of 50 ensures stable and consistent amplification in electronic circuits, enhancing overall performance.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperatures and operate reliably in various environments.

Maximum Collector-Emitter Voltage: 30 V

The maximum collector-emitter voltage of 30V allows for higher voltage handling capabilities, making it suitable for a wide range of applications.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making this transistor a dependable choice for electronic circuits.

Maximum Collector Current (IC): 1 A

With a maximum collector current of 1A, this transistor can handle higher currents, making it suitable for power applications.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides a reliable and durable connection, ensuring long-term stability and performance.

Terminal Position: BOTTOM

The bottom terminal position allows for easy and secure mounting on circuit boards, improving overall reliability and ease of use.

Nominal Transition Frequency (fT): 50 MHz

With a nominal transition frequency of 50 MHz, this transistor can operate at high frequencies, making it suitable for applications that require fast switching speeds.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSW01ZL1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSW01ZL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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