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MPSW92

Onsemi

MPSW92 by Onsemi

MPSW92 by Onsemi is a PNP BJT transistor with 3 terminals, ideal for switching applications. With a max power dissipation of 1W and max collector-emitter voltage of 300V, it operates at up to 150°C. Featuring a min hFE of 25 and fT of 50MHz, it is commonly used in through-hole configurations for efficient signal amplification.

Median Price

$0.675

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,034 parts In-Stock

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$0.100

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2,034

$0.100

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Component Electronics Inc.

Canada . 136 parts In-Stock

1+ parts

$0.650

100+ parts

$0.490

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$0.430

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136

$0.650

$0.490

$0.430

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DF Sales Co.

USA . 4 parts In-Stock

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$0.700

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4

$0.700

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DF Sales Co.

USA . 4 parts In-Stock

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$0.700

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4

$0.700

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Chip Stock

USA . 39,000 parts In-Stock

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39,000

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Digiode

USA . 1,520 parts In-Stock

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1,520

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Anansix

USA . 758 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 439 parts In-Stock

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439

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Nova Conductors

Japan . 300 parts In-Stock

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300

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PUI

USA . 259 parts In-Stock

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259

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MISTER SPROCKETS

USA . 86 parts In-Stock

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86

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LittleDiode

UK . 25 parts In-Stock

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25

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ABC Electronics Ltd.

UK . 5 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 479 parts In-Stock

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$0.650

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479

$0.650

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Ampacity Inc.

Singapore . 961 parts In-Stock

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$58.050

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961

$58.050

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Problanco Electronics

Mexico . 7,934 parts In-Stock

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TANS Electronics

Latvia . 6,911 parts In-Stock

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Kulean Microsystems

USA . 4,403 parts In-Stock

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SupplyDigital Components

Austria . 4,387 parts In-Stock

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Assy Fe

Spain . 3,872 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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Corphita

USA . 1,655 parts In-Stock

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Argo Parts USA

USA . 1,514 parts In-Stock

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Continental Prestige Electronics

USA . 1,378 parts In-Stock

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UHIMA Technologies

Türkiye . 857 parts In-Stock

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Perfect Parts

USA . 192 parts In-Stock

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Overview

Unlock endless possibilities with the MPSW92 by Onsemi, a high-quality Small Signal Bipolar Junction Transistor. Manufactured by Onsemi, this PNP transistor is perfect for switching applications. With a maximum power dissipation of 1W and a maximum collector-emitter voltage of 300V, the MPSW92 offers unparalleled performance and reliability. Whether you're designing electronic circuits or building prototypes, this transistor's superior quality and durability will ensure smooth operation every time. Trust Onsemi to deliver cutting-edge technology that exceeds your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, ensuring reliable performance and longevity.

Polarity or Channel Type: PNP

PNP transistors are often used in high power applications and can handle higher currents compared to NPN transistors.

Transistor Application: SWITCHING

Designed specifically for switching applications, making it highly efficient and suitable for tasks where rapid on/off switching is required.

Maximum Collector-Emitter Voltage: 300 V

Can handle high voltage levels, making it suitable for applications requiring higher voltage operation.

Minimum DC Current Gain (hFE): 25

A high DC current gain ensures efficient amplification of signals, making this transistor ideal for signal processing applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without compromising performance.

Nominal Transition Frequency (fT): 50 MHz

With a high nominal transition frequency, this transistor can handle fast switching speeds and high-frequency signals.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSW92 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-226

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSW92 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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