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MPSW01ARLRM

Onsemi

MPSW01ARLRM by Onsemi

MPSW01ARLRM by Onsemi is a NPN BJT transistor with hFE of 50, VCEO of 40V, and IC of 1A. It is used in small signal applications due to its SILICON material and 50MHz fT. The THROUGH-HOLE package style makes it suitable for various electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,930 parts In-Stock

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Vyrian

USA . 1,380 parts In-Stock

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1,380

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Problanco Electronics

Mexico . 6,425 parts In-Stock

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Corphita

USA . 2,186 parts In-Stock

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Kulean Microsystems

USA . 1,489 parts In-Stock

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SupplyDigital Components

Austria . 1,241 parts In-Stock

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TANS Electronics

Latvia . 834 parts In-Stock

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834

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Corohmni

South Africa . 401 parts In-Stock

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401

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UHIMA Technologies

Türkiye . 184 parts In-Stock

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Overview

Unlock endless possibilities with the MPSW01ARLRM by Onsemi. Manufactured with precision and expertise, this Small Signal Bipolar Junction Transistor (BJT) offers unparalleled quality and reliability for a wide range of applications. From amplifiers to oscillators, this NPN transistor delivers exceptional performance with a maximum collector-emitter voltage of 40V and a maximum collector current of 1A. Trust in Onsemi's reputation for excellence and experience the value and benefits of the MPSW01ARLRM in your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material ensures durability and protection for the transistor, making it suitable for various environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifying circuits, making this product versatile for different electronic applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes the transistor easy to integrate into electronic devices.

Package Shape: ROUND

The round package shape allows for easy mounting and soldering, facilitating the assembly process.

No. of Terminals: 3

With three terminals, this transistor provides flexibility in circuit connections and functionality.

Maximum Operating Temperature: 150 °C

The high operating temperature range ensures reliable performance even in demanding conditions.

Maximum Collector-Emitter Voltage: 40 V

The high maximum collector-emitter voltage rating allows for use in circuits with varying voltage requirements.

Maximum Collector Current (IC): 1 A

The high collector current rating enables the transistor to handle a significant amount of current, making it suitable for power applications.

Nominal Transition Frequency (fT): 50 MHz

The high transition frequency indicates that the transistor can operate at high frequencies, making it ideal for applications requiring fast switching speeds.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSW01ARLRM attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSW01ARLRM Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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