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MPSW01RLRA

Onsemi

MPSW01RLRA by Onsemi

MPSW01RLRA by Onsemi is a NPN BJT with hFE of 50, VCEO of 30V, and IC of 1A. Ideal for low-power applications in electronics due to its high transition frequency of 50MHz. Its through-hole package makes it suitable for various circuit designs requiring a single NPN transistor.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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R&J Components

USA . 2,000 parts In-Stock

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2,000

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Digiode

USA . 960 parts In-Stock

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960

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Vyrian

USA . 800 parts In-Stock

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800

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Distributors (Availability)

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Kulean Microsystems

USA . 7,303 parts In-Stock

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7,303

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SupplyDigital Components

Austria . 7,062 parts In-Stock

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7,062

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TANS Electronics

Latvia . 5,205 parts In-Stock

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Problanco Electronics

Mexico . 4,750 parts In-Stock

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4,750

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Corphita

USA . 1,819 parts In-Stock

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1,819

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UHIMA Technologies

Türkiye . 154 parts In-Stock

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Corohmni

South Africa . 54 parts In-Stock

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Overview

Elevate your electronics projects with the Onsemi MPSW01RLRA Small Signal Bipolar Junction Transistor. Manufactured by Onsemi, a trusted industry leader, this NPN transistor offers reliable performance and quality. Perfect for a variety of applications, this transistor provides an efficient solution for amplification and switching tasks. With a maximum collector-emitter voltage of 30V and a nominal transition frequency of 50MHz, this transistor delivers excellent results. Upgrade your designs with the MPSW01RLRA and experience the value and benefits it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-lasting performance.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile.

Minimum DC Current Gain (hFE): 50

Ensures reliable and consistent amplification of input signals.

Maximum Collector-Emitter Voltage: 30 V

Suitable for low to medium voltage applications, providing flexibility in circuit design.

Maximum Collector Current (IC): 1 A

Capable of handling higher current flows, making it suitable for a variety of applications.

Nominal Transition Frequency (fT): 50 MHz

Allows for high-frequency operation, ideal for applications requiring fast response times.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSW01RLRA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSW01RLRA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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