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MPSW01RL

Onsemi

MPSW01RL by Onsemi

MPSW01RL by Onsemi is a NPN BJT transistor with hFE of 50, IC of 1A, and VCE of 30V. Ideal for low-power applications in electronics due to its high transition frequency of 50MHz. Its through-hole package makes it suitable for various circuit designs requiring a single NPN configuration.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,806 parts In-Stock

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Vyrian

USA . 980 parts In-Stock

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SupplyDigital Components

Austria . 8,347 parts In-Stock

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Problanco Electronics

Mexico . 4,045 parts In-Stock

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TANS Electronics

Latvia . 2,221 parts In-Stock

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Kulean Microsystems

USA . 1,062 parts In-Stock

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Corphita

USA . 533 parts In-Stock

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UHIMA Technologies

Türkiye . 448 parts In-Stock

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Corohmni

South Africa . 418 parts In-Stock

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Overview

Unlock the power of innovation with the MPSW01RL by Onsemi, a high-quality Small Signal Bipolar Junction Transistor designed to deliver exceptional performance and reliability. Manufactured by industry leader Onsemi, this NPN transistor is perfect for a wide range of applications, offering customers unparalleled value and benefits. Whether you're looking to amplify signals or control electrical currents, trust the MPSW01RL to exceed your expectations and take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides high durability and resistance to environmental factors, ensuring a long lifespan for the transistor.

Polarity or Channel Type: NPN

NPN transistors generally have higher electron mobility and faster switching speeds compared to PNP transistors, making them suitable for high-frequency applications.

Configuration: SINGLE

Simplifies circuit design and implementation, making it easier to integrate the transistor into various electronic devices.

Package Shape: ROUND

Allows for easy mounting and soldering onto circuit boards, facilitating the manufacturing process.

Minimum DC Current Gain (hFE): 50

Ensures stable and reliable amplification of current signals in a circuit.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for applications where heat dissipation is a concern.

Maximum Collector-Emitter Voltage: 30 V

Provides a high voltage tolerance, allowing the transistor to handle higher voltage signals without breakdown.

Maximum Collector Current (IC): 1 A

Can handle high current levels, making it suitable for power amplification and switching applications.

Nominal Transition Frequency (fT): 50 MHz

Has a high frequency response, enabling the transistor to amplify high-frequency signals accurately.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSW01RL attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSW01RL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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