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MPSW01ARLRP

Onsemi

MPSW01ARLRP by Onsemi

MPSW01ARLRP by Onsemi is a NPN BJT with 3 terminals, max power dissipation of 0.625W, and max collector current of 1A. It is used in applications requiring a single configuration transistor with a min DC current gain of 50 (hFE) and operating temperature up to 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bristol Electronics

USA . 40,119 parts In-Stock

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Atlantic Semiconductor

USA . 40,119 parts In-Stock

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Chip Stock

USA . 32,000 parts In-Stock

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32,000

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Digiode

USA . 1,996 parts In-Stock

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Vyrian

USA . 1,624 parts In-Stock

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Kepictronics

USA . 15,000 parts In-Stock

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Metaverse IC Inc.

Canada . 15,000 parts In-Stock

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Problanco Electronics

Mexico . 5,544 parts In-Stock

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Kulean Microsystems

USA . 4,900 parts In-Stock

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TANS Electronics

Latvia . 2,601 parts In-Stock

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SupplyDigital Components

Austria . 2,593 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,309 parts In-Stock

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Corphita

USA . 1,112 parts In-Stock

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UHIMA Technologies

Türkiye . 362 parts In-Stock

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Corohmni

South Africa . 341 parts In-Stock

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Overview

Upgrade your electronics with the MPSW01ARLRP by Onsemi. Manufactured with precision and quality in mind, this Small Signal Bipolar Junction Transistor offers reliable performance and durability. Ideal for a wide range of applications, this NPN transistor is perfect for amplification, switching, and signal processing. With a maximum power dissipation of 0.625 W and a maximum collector-emitter voltage of 40 V, this transistor provides exceptional value and efficiency. Trust Onsemi for top-notch components that deliver outstanding results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a durable and lightweight housing for the transistor.

Polarity or Channel Type: NPN

Allows for easy integration in NPN circuits.

Configuration: SINGLE

Simplifies circuit design by using a single transistor.

Package Shape: ROUND

Facilitates easy mounting and soldering in circular PCB layouts.

Terminal Form: THROUGH-HOLE

Enables robust mechanical connection to the PCB.

No. of Terminals: 3

Provides necessary connections for proper functioning.

Maximum Power Dissipation (Abs): 0.625 W

Can handle moderate power levels without overheating.

Package Style (Meter): CYLINDRICAL

Easily fits in cylindrical enclosures or housings.

Minimum DC Current Gain (hFE): 50

Ensures stable and predictable amplification characteristics.

Maximum Operating Temperature: 150 °C

Allows for reliable operation in high-temperature environments.

Maximum Collector-Emitter Voltage: 40 V

Suitable for low to medium voltage applications.

Transistor Element Material: SILICON

Offers high performance and reliability as a semiconductor material.

Maximum Collector Current (IC): 1 A

Capable of handling moderate current levels in various applications.

Terminal Finish: TIN LEAD

Enables easy soldering and good electrical conductivity.

Terminal Position: BOTTOM

Facilitates proper orientation during PCB assembly.

Peak Reflow Temperature °C: 235

Withstands high-temperature soldering processes during assembly.

Nominal Transition Frequency (fT): 50 MHz

Provides high-frequency performance for signal amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSW01ARLRP attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSW01ARLRP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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