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MMBT2222ALT3G

Onsemi

MMBT2222ALT3G by Onsemi

MMBT2222ALT3G by Onsemi is a NPN BJT transistor with 40V VCEO, 0.6A IC, and 300MHz fT. Ideal for switching applications, it has a small outline package style and operates up to 150°C. With Gull Wing terminals and matte tin finish, it offers fast turn-on/off times of 35ns/285ns.

Median Price

$0.034

Lifecycle Status

Suppliers In-Stock

22

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 13,036 parts In-Stock

1+ parts

$0.145

100+ parts

$0.058

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$0.039

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13,036

$0.145

$0.058

$0.039

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Adafruit Industries

USA . 200 parts In-Stock

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$1.526

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$1.450

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$1.450

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200

$1.526

$1.450

$1.450

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EBV Elektronik

Germany . 220,000 parts In-Stock

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Arrow

USA . 150,000 parts In-Stock

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Verical

USA . 150,000 parts In-Stock

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Chip1Stop

Japan . 40,000 parts In-Stock

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$0.010

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Farnell

UK . 36,348 parts In-Stock

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36,348

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$0.022

Element14

Singapore . 36,348 parts In-Stock

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$0.043

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$0.036

36,348

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$0.036

Avnet

USA . 20,000 parts In-Stock

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RS (Exports)

UK . 5,900 parts In-Stock

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$0.050

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5,900

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Distributors (In-Stock)

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Nova Conductors

Japan . 150 parts In-Stock

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$0.037

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$0.037

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Digiode

USA . 903 parts In-Stock

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903

$0.102

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NAC Semi

USA . 180,000 parts In-Stock

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IBS Electronics

USA . 160,000 parts In-Stock

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$0.012

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$0.012

Vyrian

USA . 124,861 parts In-Stock

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Chip Stock

USA . 85,120 parts In-Stock

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Cyclops Electronics Ltd

UK . 25,644 parts In-Stock

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Elcom Components

USA . 9,637 parts In-Stock

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Sensible Micro Corp

USA . 3,880 parts In-Stock

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Connector Distribution Corp

USA . 2,500 parts In-Stock

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Right Parts Inc.

USA . 2,500 parts In-Stock

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Prism Electronics

USA . 447 parts In-Stock

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Semicontronic

India . 125,120 parts In-Stock

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$0.009

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$0.009

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$0.009

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125,120

$0.009

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$0.009

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Ampacity Inc.

Singapore . 122,746 parts In-Stock

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$0.009

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Corohmni

South Africa . 153 parts In-Stock

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$0.010

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Component Stockers USA

USA . 314,707 parts In-Stock

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314,707

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$0.010

Argo Parts USA

USA . 2,405 parts In-Stock

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$0.037

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2,405

$0.037

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$0.036

Modulus Dynamics

Lithuania . 26 parts In-Stock

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$0.040

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$0.040

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26

$0.040

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Corphita

USA . 565 parts In-Stock

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Benley Electronics

USA . 26 parts In-Stock

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$0.400

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26

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Aztec Data Supply Inc.

USA . 294 parts In-Stock

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$0.440

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294

$0.440

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Advanced Electronics

New Zealand . 200 parts In-Stock

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$1.526

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$1.450

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$1.450

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$1.526

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$1.450

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Perfect Parts

USA . 610,390 parts In-Stock

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RC Electronics

USA . 60,000 parts In-Stock

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$0.030

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iodParts Technologies Inc.

India . 49,480 parts In-Stock

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$0.025

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Kepictronics

USA . 40,000 parts In-Stock

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Continental Prestige Electronics

USA . 38,883 parts In-Stock

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$0.043

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$0.029

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Speed Components Ltd (Excess)

Israel . 32,869 parts In-Stock

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32,869

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Metaverse IC Inc.

Canada . 18,000 parts In-Stock

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Robosynatics

Brazil . 15,959 parts In-Stock

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$1.273

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$1.247

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$1.247

15,959

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$1.247

Lucentia Tech

USA . 15,959 parts In-Stock

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$1.273

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$1.247

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$1.247

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$1.247

$1.247

QUARKTWIN TECHNOLOGY LTD

USA . 15,151 parts In-Stock

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Lixinc

USA . 12,690 parts In-Stock

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Eastek

USA . 10,000 parts In-Stock

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Kulean Microsystems

USA . 5,369 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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SupplyDigital Components

Austria . 1,069 parts In-Stock

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TANS Electronics

Latvia . 975 parts In-Stock

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Futuretech Components

Singapore . 965 parts In-Stock

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Problanco Electronics

Mexico . 399 parts In-Stock

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GreenTree Electronics

Israel . 135 parts In-Stock

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UHIMA Technologies

Türkiye . 134 parts In-Stock

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Overview

Enhance your electronic projects with the MMBT2222ALT3G by Onsemi! Manufactured with precision and expertise, this Small Signal Bipolar Junction Transistor (BJT) offers high quality and reliability for switching applications. With a maximum collector-emitter voltage of 40V and a transition frequency of 300 MHz, this NPN transistor provides exceptional performance and efficiency. Its compact design and surface mount package make it ideal for space-constrained projects. Trust Onsemi for cutting-edge technology and elevate your designs with the MMBT2222ALT3G!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, increasing its longevity and reliability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching circuits, making this product suitable for a wide range of applications.

Configuration: SINGLE

Simplified design and ease of use for circuit integration.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in such circuits.

Surface Mount: YES

Can be easily mounted on circuit boards, saving space and allowing for efficient assembly.

Package Shape: RECTANGULAR

Compact package design for easy integration into electronic circuits.

Terminal Form: GULL WING

Enables easy soldering onto circuit boards, enhancing the overall assembly process.

No. of Terminals: 3

Simplified connection setup, reducing potential points of failure and increasing reliability.

Maximum Power Dissipation (Abs): 0.3 W

Can handle moderate power levels, suitable for various applications without overheating.

Package Style (Meter): SMALL OUTLINE

Compact design suitable for space-constrained applications.

Minimum DC Current Gain (hFE): 75

Ensures consistent amplification of current in the transistor, crucial for reliable performance.

Maximum Operating Temperature: 150 °C

Can operate efficiently at elevated temperatures, providing versatility for various working environments.

Maximum Collector-Emitter Voltage: 40 V

Can handle relatively high voltages, making it suitable for a wide range of circuit designs.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability in electronic circuits.

Maximum Turn On Time (ton): 35 ns

Provides fast switching speed, crucial for time-sensitive applications.

Maximum Collector Current (IC): 0.6 A

Can handle moderate current levels, suitable for various electronic circuits.

Maximum Turn Off Time (toff): 285 ns

Ensures fast turn-off of the transistor, important for reducing power consumption and heat generation.

Terminal Finish: MATTE TIN

Provides a reliable and durable terminal finish for secure electrical connections.

Terminal Position: DUAL

Allows for versatile mounting options and ease of connection in circuit layouts.

Maximum Time At Peak Reflow Temperature (s): 30

Efficient reflow soldering process, ensuring proper connection and reliability.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures, essential for proper soldering during manufacturing.

Nominal Transition Frequency (fT): 300 MHz

Offers high-frequency operation, making this transistor suitable for high-speed switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMBT2222ALT3G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

75

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

285 ns

Maximum Turn On Time (ton):

35 ns

Trade Compliance

MMBT2222ALT3G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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