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MPSA29G

Onsemi

MPSA29G by Onsemi

MPSA29G by Onsemi is a NPN Darlington BJT with hFE of 10000, VCEO of 100V, and IC of 0.5A. Ideal for amplifier applications due to its high gain and temperature range up to 150 °C. Its cylindrical package with through-hole terminals makes it suitable for various electronic designs.

Median Price

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Lifecycle Status

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5

In-Stock Inventory

1k+

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Vyrian

USA . 6,331 parts In-Stock

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Digiode

USA . 533 parts In-Stock

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Semtec, LLC

USA . 12 parts In-Stock

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GES GmbH

Germany . 7 parts In-Stock

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Prism Electronics

USA . 3 parts In-Stock

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AZTECH Wire

Italy . 486 parts In-Stock

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$18.540

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Perfect Parts

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TANS Electronics

Latvia . 6,078 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,123 parts In-Stock

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Problanco Electronics

Mexico . 3,219 parts In-Stock

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SupplyDigital Components

Austria . 2,217 parts In-Stock

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Corphita

USA . 1,488 parts In-Stock

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Kulean Microsystems

USA . 1,212 parts In-Stock

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Corohmni

South Africa . 458 parts In-Stock

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UHIMA Technologies

Türkiye . 283 parts In-Stock

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Assy Fe

Spain . 145 parts In-Stock

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Overview

Enhance your electronic projects with the MPSA29G by Onsemi, a high-quality NPN Darlington transistor that offers superior performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this small signal BJT is perfect for amplifier applications. With a minimum DC current gain of 10000 and a maximum collector-emitter voltage of 100V, this transistor provides exceptional value and benefits to customers looking for a dependable component for their projects. Upgrade your designs with the MPSA29G and experience the advantages of using top-notch components from a reputable manufacturer like Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable plastic/epoxy material ensures the transistor is resistant to physical damage and provides reliable performance.

Polarity or Channel Type: NPN

NPN polarity allows for easy integration with other NPN transistors in a circuit, making it versatile for various applications.

Configuration: DARLINGTON

Darlington configuration provides high current gain and low collector-emitter saturation voltage, making it ideal for amplifier applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance and efficiency in amplifying signals.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this transistor can withstand demanding operating conditions without compromising performance.

Maximum Collector-Emitter Voltage: 100 V

The high collector-emitter voltage rating of 100V allows for use in applications that require higher voltage handling capabilities.

Nominal Transition Frequency (fT): 200 MHz

The high nominal transition frequency of 200 MHz ensures fast switching speeds and high-frequency performance in amplifier applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSA29G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

10000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSA29G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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