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BC847CW,115

NXP Semiconductors

BC847CW,115 by NXP Semiconductors

NXP Semiconductors' BC847CW,115 is a NPN BJT transistor for switching applications. With VCEsat of 0.6V and hFE of 420, it operates at max temp of 150°C. Its small outline package with Gull Wing terminals makes it suitable for surface mount designs.

Median Price

$0.033

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42

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1k+

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Adafruit Industries

USA . 270 parts In-Stock

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Mouser Electronics

USA . 79,287 parts In-Stock

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$0.130

$0.050

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$0.022

DigiKey

USA . 1,940 parts In-Stock

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$0.130

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$0.047

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TTI

USA . 399,000 parts In-Stock

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EBV Elektronik

Germany . 372,000 parts In-Stock

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Arrow

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RS (Exports)

UK . 94,200 parts In-Stock

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Elektronika Sales Private Limited

India . 89,990 parts In-Stock

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Verical

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Element14

Singapore . 63,000 parts In-Stock

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Newark

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Farnell

UK . 30,201 parts In-Stock

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Avnet

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Rochester

USA . 1,990 parts In-Stock

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Chip1Stop

Japan . 709 parts In-Stock

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Digiode

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Nova Conductors

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Maritex

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TME

Poland . 56,154 parts In-Stock

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Bristol Electronics

USA . 51,000 parts In-Stock

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Component Electronics Inc.

Canada . 500 parts In-Stock

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IBS Electronics

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NAC Semi

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Sensible Micro Corp

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Ampacity Inc.

Singapore . 284,311 parts In-Stock

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AZTECH Wire

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Argo Parts USA

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Netroflash

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Modulus Dynamics

Lithuania . 18,357 parts In-Stock

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Advanced Electronics

New Zealand . 270 parts In-Stock

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Aztec Data Supply Inc.

USA . 24,290 parts In-Stock

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Perfect Parts

USA . 8,871,753 parts In-Stock

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Eastek

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USA . 798,355 parts In-Stock

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Allen Electronics Distributors

USA . 94,600 parts In-Stock

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CPlus Electronics

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Authorized Procurement Solutions

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Futuretech Components

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Brazil . 11,159 parts In-Stock

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UNI Independent Distributors

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Overview

Discover the superior performance and reliability of the BC847CW,115 by NXP Semiconductors, a leading manufacturer in the industry. This Small Signal Bipolar Junction Transistor (BJT) offers seamless switching capabilities with a high DC current gain of 420, making it ideal for a wide range of applications. With a maximum VCEsat of 0.6V and a compact package style, this transistor delivers efficient power dissipation and precise operation. Trust NXP Semiconductors to provide top-quality components that enhance your projects with unmatched value and precision.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering good performance.

Configuration: SINGLE

Simplifies circuit design and makes the transistor easy to work with.

Transistor Application: SWITCHING

Optimized for fast switching applications, improving overall efficiency.

Surface Mount: YES

Ideal for compact and densely populated PCB designs, saving space and reducing manufacturing costs.

Maximum VCEsat: 0.6 V

Low VCEsat minimizes power loss and improves efficiency in switching applications.

Package Shape: RECTANGULAR

Facilitates easy placement and soldering on PCBs, improving assembly process.

Terminal Form: GULL WING

Gull wing terminals enhance mechanical strength and reliability of solder joints.

No. of Terminals: 3

Simple 3-terminal design makes it easy to integrate into circuits.

Maximum Power Dissipation (Abs): 0.2 W

Ability to handle higher power dissipation ensures reliability in demanding applications.

Package Style (Meter): SMALL OUTLINE

Compact form factor saves space on the PCB and reduces overall size of the device.

Minimum DC Current Gain (hFE): 420

High DC current gain provides good amplification and switching performance.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for use in various environmental conditions.

Maximum Collector-Base Capacitance: 3 pF

Low collector-base capacitance minimizes signal distortion and improves high-frequency performance.

Maximum Collector-Emitter Voltage: 45 V

High collector-emitter voltage rating offers robustness and reliability in diverse applications.

Transistor Element Material: SILICON

Silicon transistors offer high performance, reliability, and are widely used in semiconductor applications.

Maximum Collector Current (IC): 0.1 A

Able to handle moderate current levels, suitable for various low-power applications.

Terminal Finish: TIN

Tin terminal finish provides good solderability and corrosion resistance.

Terminal Position: DUAL

Dual terminal position offers flexibility in mounting and placement on the PCB.

Maximum Time At Peak Reflow Temperature (s): 30

Quick reflow time ensures efficient and reliable soldering during manufacturing process.

Peak Reflow Temperature °C: 260

High peak reflow temperature allows for lead-free soldering and reliable connections.

Reference Standard: IEC-60134

Compliance with international standard ensures quality and reliability of the product.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency enables fast switching speeds and high-frequency performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC847CW,115 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3 pF

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

420

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

IEC-60134

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.6 V

Trade Compliance

BC847CW,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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