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MPSW45AZL1G

Onsemi

MPSW45AZL1G by Onsemi

MPSW45AZL1G by Onsemi is a NPN Darlington BJT with hFE of 4000, VCE of 50V, and IC of 1A. Ideal for amplifier applications due to its high gain and current capabilities. Its cylindrical package with through-hole terminals makes it suitable for various electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 4,046 parts In-Stock

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Digiode

USA . 1,673 parts In-Stock

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AZTECH Wire

Italy . 678 parts In-Stock

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$16.380

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Component Stockers USA

USA . 445 parts In-Stock

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$99.990

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Perfect Parts

USA . 7,324 parts In-Stock

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Problanco Electronics

Mexico . 4,342 parts In-Stock

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Kulean Microsystems

USA . 1,240 parts In-Stock

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Corphita

USA . 985 parts In-Stock

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SupplyDigital Components

Austria . 693 parts In-Stock

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TANS Electronics

Latvia . 597 parts In-Stock

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UHIMA Technologies

Türkiye . 476 parts In-Stock

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Corohmni

South Africa . 55 parts In-Stock

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Overview

Enhance your amplifier circuits with the MPSW45AZL1G Small Signal Bipolar Junction Transistor by Onsemi. This high-quality NPN Darlington transistor offers a DC current gain of 4000 and a maximum operating temperature of 150 °C, providing reliable performance in a variety of applications. From audio amplifiers to signal processing, this transistor is designed to deliver exceptional value and benefits to customers seeking top-notch quality and efficiency. Trust Onsemi's expertise in semiconductor technology to elevate your electronic projects with the MPSW45AZL1G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, suitable for various applications

Polarity or Channel Type: NPN

Commonly used for amplification and switching applications

Configuration: DARLINGTON

Provides high current gain and excellent performance in amplification circuits

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes

Maximum Operating Temperature: 150 °C

Can operate under higher temperatures for extended periods

Maximum Collector-Emitter Voltage: 50 V

Suitable for low to medium voltage applications

Maximum Collector Current (IC): 1 A

Handles moderate current levels effectively

Nominal Transition Frequency (fT): 100 MHz

High frequency response for fast switching applications

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSW45AZL1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

4000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSW45AZL1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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