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MPSA28G

Onsemi

MPSA28G by Onsemi

MPSA28G by Onsemi is a NPN Darlington BJT with hFE of 10000, IC of 0.5A, and fT of 200MHz. Ideal for applications requiring high current gain and frequency response in through-hole configurations.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 6,752 parts In-Stock

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Digiode

USA . 948 parts In-Stock

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AZTECH Wire

Italy . 514 parts In-Stock

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$13.430

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A-Z Elektronik GmbH

Germany . 7,493 parts In-Stock

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TANS Electronics

Latvia . 6,006 parts In-Stock

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Problanco Electronics

Mexico . 4,980 parts In-Stock

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SupplyDigital Components

Austria . 2,811 parts In-Stock

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Corphita

USA . 2,269 parts In-Stock

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Kulean Microsystems

USA . 1,630 parts In-Stock

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Perfect Parts

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Corohmni

South Africa . 477 parts In-Stock

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UHIMA Technologies

Türkiye . 175 parts In-Stock

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Overview

Elevate your electronic projects with the MPSA28G by Onsemi! As a leading manufacturer in the industry, Onsemi delivers top-notch quality and reliability in their Small Signal Bipolar Junction Transistors. The NPN configuration and high DC current gain make this transistor ideal for a wide range of applications. Whether you're designing circuits for automotive electronics or industrial control systems, the MPSA28G offers unmatched performance and durability. Trust Onsemi to provide you with the tools you need to bring your creations to life.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier circuits, making this product versatile for different electronic designs.

Configuration: DARLINGTON

Darlington configuration offers high current gain and low saturation voltage, ideal for applications requiring high power efficiency.

Package Shape: ROUND

Round shape allows for easy mounting and fitting in compact spaces, enabling flexible design options.

No. of Terminals: 3

Three terminals provide necessary connectivity for the transistor to function effectively in a circuit.

Minimum DC Current Gain (hFE): 10000

High DC current gain ensures reliable amplification performance in various signal processing applications.

Maximum Operating Temperature: 150 °C

With a high operating temperature range, this transistor can withstand tough environmental conditions without compromising performance.

Maximum Collector Current (IC): 0.5 A

Supports high collector current, making it suitable for applications requiring moderate power handling capacity.

Terminal Finish: TIN SILVER COPPER

High-quality terminal finish ensures good electrical conductivity and solderability for reliable connections in circuits.

Nominal Transition Frequency (fT): 200 MHz

High transition frequency allows for fast signal switching and amplification, making this transistor suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSA28G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

10000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSA28G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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