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MPSA77RLRAG

Onsemi

MPSA77RLRAG by Onsemi

MPSA77RLRAG by Onsemi is a PNP Darlington BJT transistor with hFE of 10000, VCEO of 60V, and IC of 0.5A. Ideal for amplifier applications due to its high gain and operating temperature up to 150 °C. Its cylindrical package with through-hole terminals makes it suitable for various electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 4,693 parts In-Stock

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Digiode

USA . 1,089 parts In-Stock

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AZTECH Wire

Italy . 819 parts In-Stock

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$18.860

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819

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QUARKTWIN TECHNOLOGY LTD

USA . 12,704 parts In-Stock

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SupplyDigital Components

Austria . 7,388 parts In-Stock

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Problanco Electronics

Mexico . 5,511 parts In-Stock

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TANS Electronics

Latvia . 3,650 parts In-Stock

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Kulean Microsystems

USA . 1,390 parts In-Stock

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UHIMA Technologies

Türkiye . 960 parts In-Stock

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Corphita

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Corohmni

South Africa . 57 parts In-Stock

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Overview

Unlock the power of high-quality amplification with the MPSA77RLRAG by Onsemi. As a leading manufacturer in the industry, Onsemi delivers superior performance and reliability in every product. Ideal for applications in small signal amplification, this PNP Darlington transistor offers exceptional value and benefits to customers seeking top-notch quality. Trust Onsemi and elevate your projects to new heights with the MPSA77RLRAG.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protects the transistor from external factors, making it durable and long-lasting.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching circuits, making this transistor suitable for amplifier applications.

Configuration: DARLINGTON

Darlington configuration offers high current gain and low saturation voltage, making this transistor ideal for amplifier applications where high gain is required.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor provides high gain and good linearity for amplifying signals.

Package Shape: ROUND

The round package shape allows for easy installation and handling, making it convenient for use in various amplifier circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connections, ensuring reliability in amplifier circuits.

No. of Terminals: 3

With three terminals, this transistor can easily be integrated into amplifier circuits for signal amplification.

Minimum DC Current Gain (hFE): 10000

A high DC current gain of 10000 indicates strong signal amplification capabilities, making it suitable for amplifier applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperatures, making it reliable in amplifier circuits.

Maximum Collector-Emitter Voltage: 60 V

The maximum collector-emitter voltage of 60V allows this transistor to handle high voltage signals in amplifier circuits.

Transistor Element Material: SILICON

Silicon transistors offer high performance and efficiency, making this transistor a reliable choice for amplifier applications.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5A, this transistor can handle moderate current levels in amplifier circuits.

Terminal Finish: TIN SILVER COPPER

The terminal finish of Tin Silver Copper ensures good conductivity and solderability, providing reliable connections in amplifier circuits.

Terminal Position: BOTTOM

The bottom terminal position makes it easy to connect the transistor in amplifier circuits, ensuring proper signal amplification.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260 °C, this transistor can withstand high temperatures during soldering, ensuring proper connections in amplifier circuits.

Nominal Transition Frequency (fT): 125 MHz

A high nominal transition frequency of 125 MHz indicates fast response and good high-frequency performance, making this transistor suitable for amplifier circuits with high-frequency signals.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSA77RLRAG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

10000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSA77RLRAG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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