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MPSW63RLRAG

Onsemi

MPSW63RLRAG by Onsemi

MPSW63RLRAG by Onsemi is a PNP Darlington BJT with 3 terminals. It features a max power dissipation of 1W, hFE of 10000, and fT of 125MHz. Ideal for applications requiring high current gain and frequency amplification in electronic circuits.

Median Price

$0.080

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3,000 parts In-Stock

1+ parts

$0.080

100+ parts

$0.075

1k+ parts

$0.068

10k+ parts

-

3,000

$0.080

$0.075

$0.068

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,017 parts In-Stock

1+ parts

$0.076

100+ parts

-

1k+ parts

-

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1,017

$0.076

-

-

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Vyrian

USA . 6,255 parts In-Stock

1+ parts

-

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6,255

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 300 parts In-Stock

1+ parts

$0.072

100+ parts

-

1k+ parts

-

10k+ parts

-

300

$0.072

-

-

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Corohmni

South Africa . 318 parts In-Stock

1+ parts

$0.080

100+ parts

-

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318

$0.080

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AZTECH Wire

Italy . 461 parts In-Stock

1+ parts

$21.300

100+ parts

-

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461

$21.300

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-

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QUARKTWIN TECHNOLOGY LTD

USA . 12,611 parts In-Stock

1+ parts

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12,611

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TANS Electronics

Latvia . 7,770 parts In-Stock

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7,770

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SupplyDigital Components

Austria . 7,607 parts In-Stock

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7,607

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Problanco Electronics

Mexico . 2,598 parts In-Stock

1+ parts

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2,598

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UHIMA Technologies

Türkiye . 394 parts In-Stock

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394

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Kulean Microsystems

USA . 273 parts In-Stock

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273

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Overview

Enhance your electronic projects with the MPSW63RLRAG by Onsemi, a top-quality Small Signal Bipolar Junction Transistor. Manufactured by industry leader Onsemi, this PNP Darlington transistor offers reliable performance and durability. Ideal for a variety of applications, this transistor provides exceptional value and benefits to customers looking for high DC current gain, low power dissipation, and a wide operating temperature range. Trust Onsemi to deliver innovative solutions for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable material ensures longevity and reliability for the transistor.

Polarity or Channel Type: PNP

PNP transistors are versatile and commonly used in amplifier circuits.

Configuration: DARLINGTON

Darlington configuration provides high current gain and low saturation voltage, making it suitable for applications requiring high amplification.

Package Shape: ROUND

The round package shape allows for easy mounting and integration in circular layouts.

No. of Terminals: 3

Three terminals provide flexibility in circuit connections and configurations.

Maximum Power Dissipation (Abs): 1 W

With a maximum power dissipation of 1 W, this transistor can handle high power levels without overheating.

Minimum DC Current Gain (hFE): 10000

High DC current gain ensures efficient signal amplification and performance in various applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows for reliable performance even in elevated temperature environments.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making them a popular choice in electronic circuits.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5 A, this transistor can handle moderate current levels in circuits.

Terminal Finish: TIN SILVER COPPER

The terminal finish provides good conductivity and corrosion resistance for reliable connections.

Nominal Transition Frequency (fT): 125 MHz

The high nominal transition frequency allows for fast switching speeds and high-frequency operation in electronic circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSW63RLRAG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

10000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSW63RLRAG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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