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MPSW13RLRAG

Onsemi

MPSW13RLRAG by Onsemi

MPSW13RLRAG by Onsemi is a NPN Darlington BJT with 1A IC, 125MHz fT, and 10000 hFE. Ideal for applications requiring high current gain and frequency response in through-hole configurations. Suitable for amplification circuits in electronic devices due to its high power dissipation of 1W and operating temperature up to 150 °C.

Median Price

$0.130

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,000 parts In-Stock

1+ parts

$0.130

100+ parts

$0.130

1k+ parts

$0.120

10k+ parts

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2,000

$0.130

$0.130

$0.120

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 687 parts In-Stock

1+ parts

$0.124

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-

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687

$0.124

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Vyrian

USA . 7,575 parts In-Stock

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7,575

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Distributors (Availability)

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Corphita

USA . 713 parts In-Stock

1+ parts

$0.117

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713

$0.117

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Corohmni

South Africa . 276 parts In-Stock

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$0.130

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276

$0.130

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AZTECH Wire

Italy . 886 parts In-Stock

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$21.420

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886

$21.420

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Component Stockers USA

USA . 799 parts In-Stock

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$99.990

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799

$99.990

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Kulean Microsystems

USA . 8,270 parts In-Stock

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8,270

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TANS Electronics

Latvia . 5,279 parts In-Stock

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5,279

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Problanco Electronics

Mexico . 5,015 parts In-Stock

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5,015

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SupplyDigital Components

Austria . 1,520 parts In-Stock

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1,520

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UHIMA Technologies

Türkiye . 36 parts In-Stock

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Overview

Looking for a reliable and high-quality solution for your small signal bipolar junction transistor needs? Look no further than the MPSW13RLRAG by Onsemi. With a reputation for excellence, Onsemi delivers top-notch products that exceed expectations. This NPN Darlington transistor offers exceptional performance and reliability, making it perfect for a wide range of applications. From amplifiers to switching circuits, this transistor provides value, benefits, and advantages that will elevate your projects to the next level. Trust Onsemi and experience the difference with the MPSW13RLRAG.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the internal components, ensuring a longer lifespan of the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this transistor versatile and widely applicable.

Configuration: DARLINGTON

Darlington configuration offers high current gain and is suitable for applications requiring high amplification.

Terminal Form: THROUGH-HOLE

Through-hole terminals make it easy to solder and connect the transistor securely onto a circuit board.

Maximum Power Dissipation (Abs): 1 W

With a maximum power dissipation of 1W, this transistor can handle moderate power levels without overheating.

Minimum DC Current Gain (hFE): 10000

High DC current gain of 10000 ensures accurate amplification in various applications.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance, making it suitable for industrial and automotive applications.

Maximum Collector Current (IC): 1 A

Capable of handling high collector currents of up to 1A, making it suitable for power supply and motor control applications.

Nominal Transition Frequency (fT): 125 MHz

High frequency response allows for faster switching speeds, making it ideal for RF applications and high-speed digital circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSW13RLRAG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Configuration:

Minimum DC Current Gain (hFE):

10000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSW13RLRAG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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