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MPS6725RLRPG

Onsemi

MPS6725RLRPG by Onsemi

MPS6725RLRPG by Onsemi is a NPN Darlington BJT with 1W power dissipation, 4000 min. hFE, and 50V max. VCE. Ideal for applications requiring high current gain and low power consumption in through-hole configurations.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,397 parts In-Stock

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Digiode

USA . 1,307 parts In-Stock

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AZTECH Wire

Italy . 390 parts In-Stock

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$14.800

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390

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Component Stockers USA

USA . 357 parts In-Stock

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$99.990

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357

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QUARKTWIN TECHNOLOGY LTD

USA . 21,001 parts In-Stock

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TANS Electronics

Latvia . 7,778 parts In-Stock

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Problanco Electronics

Mexico . 7,655 parts In-Stock

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SupplyDigital Components

Austria . 2,113 parts In-Stock

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Kulean Microsystems

USA . 1,952 parts In-Stock

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Corphita

USA . 595 parts In-Stock

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Corohmni

South Africa . 111 parts In-Stock

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UHIMA Technologies

Türkiye . 60 parts In-Stock

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Overview

Unlock the power of innovation with the MPS6725RLRPG by Onsemi. Crafted with precision and expertise, this Small Signal BJT offers superior performance and reliability. Ideal for a wide range of applications, this product stands out for its efficiency and versatility. Experience seamless functionality and seamless integration with this advanced technology. Elevate your projects to new heights with the unparalleled quality and value that Onsemi delivers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers good insulation properties and durability, making the transistor suitable for a wide range of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, offering high efficiency and reliability.

Configuration: DARLINGTON

Darlington configuration provides high current gain and low saturation voltage, suitable for high-power applications.

Maximum Power Dissipation: 1 W

With a high power dissipation capability, this transistor can handle moderate power levels without overheating.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows the transistor to operate reliably in a wide range of environmental conditions.

Maximum Collector-Emitter Voltage: 50 V

The high collector-emitter voltage rating ensures the transistor can handle varying voltage levels without breakdown.

Minimum DC Current Gain (hFE): 4000

The high DC current gain ensures efficient amplification and signal control in various circuits.

Terminal Finish: TIN SILVER COPPER

This finish provides good conductivity and corrosion resistance, ensuring reliable connections for the transistor.

Nominal Transition Frequency (fT): 100 MHz

The high transition frequency allows the transistor to operate effectively in high-frequency applications, such as RF circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS6725RLRPG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

4000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS6725RLRPG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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