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MPS650RLRAG

Onsemi

MPS650RLRAG by Onsemi

MPS650RLRAG by Onsemi is a NPN BJT transistor with 40V VCEO, 2A IC, and 1.5W Ptot. Ideal for amplifier applications due to its hFE of 40 and fT of 75MHz. Packaged in cylindrical shape with through-hole terminals for easy installation.

Median Price

$0.186

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1,897 parts In-Stock

1+ parts

$0.107

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1,897

$0.107

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Chip1Stop

Japan . 21 parts In-Stock

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$1.100

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21

$1.100

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Verical

USA . 1,897 parts In-Stock

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$0.107

1,897

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$0.107

Rochester

USA . 32 parts In-Stock

1+ parts

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100+ parts

$0.264

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$0.219

10k+ parts

$0.196

32

-

$0.264

$0.219

$0.196

Distributors (In-Stock)

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Digiode

USA . 2,443 parts In-Stock

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$0.102

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2,443

$0.102

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Chip Stock

USA . 47,000 parts In-Stock

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Vyrian

USA . 12,815 parts In-Stock

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12,815

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Sea View Technologies

USA . 4,000 parts In-Stock

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4,000

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Bristol Electronics

USA . 2,000 parts In-Stock

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2,000

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Nova Conductors

Japan . 23 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 820 parts In-Stock

1+ parts

$0.091

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820

$0.091

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Corphita

USA . 2,095 parts In-Stock

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$0.096

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2,095

$0.096

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Corohmni

South Africa . 109 parts In-Stock

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$0.107

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109

$0.107

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Aztec Data Supply Inc.

USA . 565 parts In-Stock

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$1.909

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565

$1.909

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AZTECH Wire

Italy . 953 parts In-Stock

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$15.600

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953

$15.600

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A-Z Elektronik GmbH

Germany . 6,683 parts In-Stock

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Continental Prestige Electronics

USA . 6,460 parts In-Stock

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TANS Electronics

Latvia . 4,769 parts In-Stock

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Problanco Electronics

Mexico . 3,351 parts In-Stock

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Kulean Microsystems

USA . 2,725 parts In-Stock

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2,725

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SupplyDigital Components

Austria . 2,118 parts In-Stock

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Argo Parts USA

USA . 2,105 parts In-Stock

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Perfect Parts

USA . 2,022 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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Futuretech Components

Singapore . 883 parts In-Stock

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883

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GreenTree Electronics

Israel . 50 parts In-Stock

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Authorized Procurement Solutions

USA . 21 parts In-Stock

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UHIMA Technologies

Türkiye . 7 parts In-Stock

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Overview

Unlock the power of amplification with the MPS650RLRAG from Onsemi. Crafted with precision and expertise, this NPN small signal bipolar junction transistor offers unparalleled performance for a wide range of applications. Whether you're building audio amplifiers or signal processing circuits, this single configuration transistor delivers superior quality and reliability. With a maximum power dissipation of 1.5W and a maximum collector current of 2A, the MPS650RLRAG is designed to meet your demanding requirements. Trust Onsemi to provide you with the tools you need to succeed in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various environmental conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, offering good performance in signal amplification.

Configuration: SINGLE

Simplified design and easy to integrate into circuitry.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes, ensuring optimal performance in such applications.

Maximum Power Dissipation (Abs): 1.5 W

Provides a reasonable power handling capacity for various amplification tasks.

Package Shape: ROUND

Compact and versatile shape for easy mounting and placement in circuit boards.

Terminal Form: THROUGH-HOLE

Simplifies the soldering process and provides a sturdy connection in a circuit board.

No. of Terminals: 3

Standard number of terminals required for basic transistor functionality.

Maximum Collector Current (IC): 2 A

High collector current rating allows for handling larger loads in amplification circuits.

Nominal Transition Frequency (fT): 75 MHz

Higher frequency capability enables the transistor to operate effectively in high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS650RLRAG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS650RLRAG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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