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MPS650ZL1G

Onsemi

MPS650ZL1G by Onsemi

MPS650ZL1G by Onsemi is a NPN small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 40V and a max collector current of 2A. It is commonly used as an amplifier in various applications.

Median Price

$0.212

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 35,982 parts In-Stock

1+ parts

$0.160

100+ parts

-

1k+ parts

$0.092

10k+ parts

$0.062

35,982

$0.160

-

$0.092

$0.062

Verical

USA . 34,000 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

$0.062

34,000

-

-

-

$0.062

Rochester

USA . 2,372 parts In-Stock

1+ parts

-

100+ parts

$0.264

1k+ parts

$0.219

10k+ parts

$0.196

2,372

-

$0.264

$0.219

$0.196

DigiKey

USA . 2,372 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.330

10k+ parts

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2,372

-

-

$0.330

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,700 parts In-Stock

1+ parts

$0.152

100+ parts

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1,700

$0.152

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Chip Stock

USA . 26,000 parts In-Stock

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26,000

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Vyrian

USA . 18,638 parts In-Stock

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18,638

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Nova Conductors

Japan . 700 parts In-Stock

1+ parts

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700

-

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-

Distributors (Availability)

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Ampacity Inc.

Singapore . 18,442 parts In-Stock

1+ parts

$0.053

100+ parts

-

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-

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18,442

$0.053

-

-

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Corohmni

South Africa . 125 parts In-Stock

1+ parts

$0.062

100+ parts

-

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125

$0.062

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Corphita

USA . 855 parts In-Stock

1+ parts

$0.144

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855

$0.144

-

-

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Aztec Data Supply Inc.

USA . 2,181 parts In-Stock

1+ parts

$1.030

100+ parts

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2,181

$1.030

-

-

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Microchip USA

USA . 341 parts In-Stock

1+ parts

$1.500

100+ parts

$1.490

1k+ parts

$1.480

10k+ parts

$1.480

341

$1.500

$1.490

$1.480

$1.480

QUARKTWIN TECHNOLOGY LTD

USA . 20,748 parts In-Stock

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20,748

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Problanco Electronics

Mexico . 7,847 parts In-Stock

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7,847

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TANS Electronics

Latvia . 7,237 parts In-Stock

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7,237

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Kulean Microsystems

USA . 5,895 parts In-Stock

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5,895

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Argo Parts USA

USA . 4,414 parts In-Stock

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4,414

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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4,000

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Continental Prestige Electronics

USA . 2,370 parts In-Stock

1+ parts

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100+ parts

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$0.196

10k+ parts

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2,370

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-

$0.196

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SupplyDigital Components

Austria . 738 parts In-Stock

1+ parts

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738

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UHIMA Technologies

Türkiye . 533 parts In-Stock

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533

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Aranea Global

USA . 100 parts In-Stock

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100

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Kepictronics

USA . 50 parts In-Stock

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50

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Overview

Discover the power and quality of the MPS650ZL1G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers excellence in every product they create. This small signal bipolar junction transistor (BJT) is designed to amplify signals with superior efficiency and accuracy. Whether you need to enhance audio or amplify electronic signals, this NPN transistor is perfect for amplifier applications. With its robust design and high-quality materials, the MPS650ZL1G offers maximum power dissipation and an extended operating temperature range. Experience the value and benefits of this reliable transistor that is built to perform under the most demanding conditions. Upgrade your amplification capabilities with the MPS650ZL1G by Onsemi today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good thermal insulation and protects the transistor from external environmental factors, ensuring reliability and longevity.

Polarity or Channel Type: NPN

Commonly used configuration in amplifiers and other electronic circuits, making it versatile and compatible with a wide range of applications.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to incorporate into electronic systems.

Transistor Application: AMPLIFIER

Specifically designed for amplification tasks, ensuring optimal performance in audio or signal processing applications.

Maximum Power Dissipation (Abs): 1.5 W

Capable of handling higher power levels without overheating, making it suitable for demanding applications.

Maximum Collector-Emitter Voltage: 40 V

Provides a high voltage tolerance, making the transistor suitable for circuits where high voltages are involved.

Nominal Transition Frequency (fT): 75 MHz

High transition frequency ensures fast response times and reliable signal processing in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS650ZL1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS650ZL1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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