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MPS6512

Onsemi

MPS6512 by Onsemi

MPS6512 by Onsemi is a NPN BJT transistor with max VCEsat of 0.5V, hFE of 30, and IC of 0.1A. Ideal for amplifier applications due to its max power dissipation of 1.5W and max operating temp of 150°C in a cylindrical package style.

Median Price

$40.450

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Sager

USA . 483 parts In-Stock

1+ parts

$26.000

100+ parts

$20.600

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-

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483

$26.000

$20.600

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Master Electronics

USA . 777 parts In-Stock

1+ parts

$44.140

100+ parts

$35.070

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-

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777

$44.140

$35.070

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Verical

USA . 754 parts In-Stock

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$40.450

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754

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$40.450

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Distributors (In-Stock)

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DF Sales Co.

USA . 1,924 parts In-Stock

1+ parts

$0.800

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1,924

$0.800

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DF Sales Co.

USA . 1,924 parts In-Stock

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$0.800

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1,924

$0.800

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TME

Poland . 213 parts In-Stock

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$22.000

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$19.400

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213

$22.000

$19.400

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Nova Conductors

Japan . 330 parts In-Stock

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$35.596

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330

$35.596

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Electro Sonic

Canada . 1,161 parts In-Stock

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$42.130

100+ parts

$36.120

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1,161

$42.130

$36.120

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IBS Electronics

USA . 782 parts In-Stock

1+ parts

$61.906

100+ parts

$49.186

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782

$61.906

$49.186

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Digiode

USA . 1,231 parts In-Stock

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$62.652

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1,231

$62.652

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Anansix

USA . 1,642 parts In-Stock

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Electronic Expediters

USA . 890 parts In-Stock

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890

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Vyrian

USA . 499 parts In-Stock

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499

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MISTER SPROCKETS

USA . 256 parts In-Stock

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256

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First Choice Components Inc.

USA . 245 parts In-Stock

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245

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Bristol Electronics

USA . 40 parts In-Stock

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$0.450

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40

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$0.450

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Component Electronics Inc.

Canada . 4 parts In-Stock

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4

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Distributors (Availability)

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Continental Prestige Electronics

USA . 7,051 parts In-Stock

1+ parts

$35.596

100+ parts

-

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10k+ parts

$34.884

7,051

$35.596

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$34.884

Netroflash

USA . 1,500 parts In-Stock

1+ parts

$35.596

100+ parts

-

1k+ parts

$33.816

10k+ parts

$33.104

1,500

$35.596

-

$33.816

$33.104

Bastille Electronics

Australia . 10 parts In-Stock

1+ parts

$35.600

100+ parts

$33.820

1k+ parts

-

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$31.684

10

$35.600

$33.820

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$31.684

Corohmni

South Africa . 334 parts In-Stock

1+ parts

$36.122

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334

$36.122

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Component Stockers USA

USA . 745 parts In-Stock

1+ parts

$39.770

100+ parts

$34.100

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$34.100

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745

$39.770

$34.100

$34.100

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Semicontronic

India . 589 parts In-Stock

1+ parts

$56.060

100+ parts

$54.658

1k+ parts

$54.378

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589

$56.060

$54.658

$54.378

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Ampacity Inc.

Singapore . 542 parts In-Stock

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$56.060

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542

$56.060

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Corphita

USA . 2,003 parts In-Stock

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$59.355

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2,003

$59.355

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Neutron USA

USA . 50 parts In-Stock

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$66.590

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$66.590

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Argo Parts USA

USA . 9,256 parts In-Stock

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Kulean Microsystems

USA . 7,937 parts In-Stock

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TANS Electronics

Latvia . 7,755 parts In-Stock

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Problanco Electronics

Mexico . 2,495 parts In-Stock

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SupplyDigital Components

Austria . 894 parts In-Stock

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Perfect Parts

USA . 549 parts In-Stock

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549

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Assy Fe

Spain . 386 parts In-Stock

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UHIMA Technologies

Türkiye . 241 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 56 parts In-Stock

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56

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Overview

Unleash the power of high-quality amplification with the MPS6512 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch Small Signal Bipolar Junction Transistors that cater to various applications, including amplifiers. With its NPN configuration and maximum VCEsat of 0.5V, this transistor offers unparalleled performance and reliability. Say goodbye to compromise and hello to superior sound quality and efficiency. Upgrade your amplification experience with the MPS6512 and discover the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

Allows for easy integration into NPN transistor circuit designs.

Configuration: SINGLE

Simplified design with a single transistor component.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring reliable performance.

Maximum VCEsat: 0.5 V

Low saturation voltage helps in reducing power consumption and heat generation.

Package Shape: ROUND

Compact and space-saving design for easy mounting and integration.

Terminal Form: THROUGH-HOLE

Makes soldering and PCB assembly process easier and more reliable.

No. of Terminals: 3

Simplified connectivity for circuit design and assembly.

Package Style (Meter): CYLINDRICAL

Provides a sturdy housing for the transistor with a compact form factor.

Maximum Power Dissipation (Abs): 1.5 W

High power dissipation capability allows for handling varying loads efficiently.

Maximum Power Dissipation Ambient: 0.625 W

Efficient heat dissipation in ambient conditions, ensuring stable operation.

Minimum DC Current Gain (hFE): 30

Consistent and reliable amplification performance with a minimum current gain value.

Maximum Operating Temperature: 150 °C

Suitable for high-temperature environments and applications.

Maximum Collector-Base Capacitance: 3.5 pF

Low capacitance for minimal signal distortion and enhanced high-frequency performance.

Maximum Collector-Emitter Voltage: 30 V

Sufficient voltage handling capacity for various circuit requirements.

Transistor Element Material: SILICON

Reliable and widely used semiconductor material for transistor fabrication.

Minimum Operating Temperature: -65 °C

Suitable for low-temperature environments and applications.

Maximum Collector Current (IC): 0.1 A

Handles moderate collector current, suitable for various amplifier applications.

Terminal Finish: TIN LEAD

Provides good conductivity and soldering properties for reliable connections.

Terminal Position: BOTTOM

Facilitates easy PCB placement and soldering during assembly.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS6512 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3.5 pF

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.625 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Maximum VCEsat:

.5 V

Trade Compliance

MPS6512 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-124-9860, 5961001249860

NIIN

001249860

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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