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MPS650ZL1

Onsemi

MPS650ZL1 by Onsemi

MPS650ZL1 by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.625W, max collector-emitter voltage of 40V, and max collector current of 2A. With a min DC current gain of 40 and operating temperature up to 150°C, it offers reliable performance in various electronic circuits.

Median Price

$0.119

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

$0.119

1k+ parts

$0.099

10k+ parts

$0.088

6,000

-

$0.119

$0.099

$0.088

DigiKey

USA . 6,000 parts In-Stock

1+ parts

-

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$0.150

6,000

-

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$0.150

Verical

USA . 6,000 parts In-Stock

1+ parts

-

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$0.110

6,000

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-

-

$0.110

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 542 parts In-Stock

1+ parts

$0.093

100+ parts

-

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542

$0.093

-

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Chip Stock

USA . 70,000 parts In-Stock

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70,000

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Huijzer Components

Netherlands . 9,700 parts In-Stock

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9,700

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Zilex Electronics Inc.

Canada . 8,800 parts In-Stock

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8,800

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ACDS - Activité Composants Distribution Service

France . 8,000 parts In-Stock

1+ parts

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8,000

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DigiKey Marketplace

USA . 6,000 parts In-Stock

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6,000

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ComSIT Distribution GmbH

Germany . 6,000 parts In-Stock

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6,000

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Vyrian

USA . 5,943 parts In-Stock

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5,943

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

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100

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 346 parts In-Stock

1+ parts

$0.088

100+ parts

-

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346

$0.088

-

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Corohmni

South Africa . 164 parts In-Stock

1+ parts

$0.098

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164

$0.098

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Component Stockers USA

USA . 5,591 parts In-Stock

1+ parts

$0.100

100+ parts

$0.100

1k+ parts

$0.090

10k+ parts

-

5,591

$0.100

$0.100

$0.090

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Ampacity Inc.

Singapore . 5,691 parts In-Stock

1+ parts

$0.181

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5,691

$0.181

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Aztec Data Supply Inc.

USA . 174 parts In-Stock

1+ parts

$0.931

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174

$0.931

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Perfect Parts

USA . 17,920 parts In-Stock

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17,920

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Cyclops Electronics Ltd (Excess)

UK . 9,900 parts In-Stock

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9,900

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SupplyDigital Components

Austria . 8,211 parts In-Stock

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8,211

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QUARKTWIN TECHNOLOGY LTD

USA . 7,332 parts In-Stock

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7,332

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Glotronic Ltd.

UK . 6,400 parts In-Stock

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6,400

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Continental Prestige Electronics

USA . 6,000 parts In-Stock

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$0.088

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6,000

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$0.088

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Argo Parts USA

USA . 4,600 parts In-Stock

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4,600

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TANS Electronics

Latvia . 4,066 parts In-Stock

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4,066

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Problanco Electronics

Mexico . 2,746 parts In-Stock

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2,746

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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Kulean Microsystems

USA . 446 parts In-Stock

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446

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UHIMA Technologies

Türkiye . 445 parts In-Stock

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445

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Aranea Global

USA . 50 parts In-Stock

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50

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Overview

Enhance your electronic projects with the MPS650ZL1 by Onsemi, a high-quality Small Signal Bipolar Junction Transistor designed for amplifier applications. Manufactured by industry leader Onsemi, this NPN transistor offers reliability and performance in a compact cylindrical package. With a maximum collector current of 2A and a minimum DC current gain of 40, this transistor is perfect for amplifying signals with ease. Upgrade your circuits today with the MPS650ZL1 and experience superior quality and precision engineering at an unbeatable value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the package lightweight and durable, ideal for portable and long-lasting applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifiers, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity in circuit layout.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification tasks.

Maximum Power Dissipation (Abs): 0.625 W

With a high maximum power dissipation, this transistor can handle high power levels without overheating.

Maximum Collector-Emitter Voltage: 40 V

Suitable for applications requiring a maximum collector-emitter voltage of up to 40V.

Maximum Collector Current (IC): 2 A

Capable of handling high collector currents, making it suitable for applications that require high current amplification.

Nominal Transition Frequency (fT): 75 MHz

With a high transition frequency, this transistor can efficiently amplify high-frequency signals.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS650ZL1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS650ZL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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