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MPS650

Onsemi

MPS650 by Onsemi

MPS650 by Onsemi is a NPN small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 40V and a max collector current of 2A. It is commonly used as an amplifier in various applications.

Median Price

$0.119

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 13,298 parts In-Stock

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-

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$0.119

1k+ parts

$0.099

10k+ parts

$0.088

13,298

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$0.119

$0.099

$0.088

DigiKey

USA . 13,298 parts In-Stock

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$0.150

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$0.150

Verical

USA . 8,825 parts In-Stock

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$0.110

8,825

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$0.110

Distributors (In-Stock)

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Digiode

USA . 481 parts In-Stock

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$0.093

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481

$0.093

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Component Electronics Inc.

Canada . 58 parts In-Stock

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$0.380

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$0.290

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$0.250

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58

$0.380

$0.290

$0.250

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Vyrian

USA . 12,102 parts In-Stock

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Legend Electronics Inc.

USA . 1,200 parts In-Stock

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1,200

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MISTER SPROCKETS

USA . 1,018 parts In-Stock

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1,018

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ICP Electronique

France . 900 parts In-Stock

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900

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Nova Conductors

Japan . 750 parts In-Stock

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750

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LittleDiode

UK . 42 parts In-Stock

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42

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Sunrise Surplus Inc.

USA . 40 parts In-Stock

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40

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Manotoh

Italy . 9 parts In-Stock

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9

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A2Z Electronics, Inc.

USA . 6 parts In-Stock

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6

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Bristol Electronics

USA . 6 parts In-Stock

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6

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Prism Electronics

USA . 4 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 183 parts In-Stock

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$0.088

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183

$0.088

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Corohmni

South Africa . 476 parts In-Stock

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$0.098

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476

$0.098

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Component Stockers USA

USA . 10,845 parts In-Stock

1+ parts

$0.100

100+ parts

$0.090

1k+ parts

$0.090

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$0.090

10,845

$0.100

$0.090

$0.090

$0.090

Aztec Data Supply Inc.

USA . 1,143 parts In-Stock

1+ parts

$0.887

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1,143

$0.887

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Benley Electronics

USA . 1 parts In-Stock

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$1.000

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1

$1.000

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QUARKTWIN TECHNOLOGY LTD

USA . 24,655 parts In-Stock

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24,655

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Continental Prestige Electronics

USA . 16,794 parts In-Stock

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$0.088

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16,794

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$0.088

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RC Electronics

USA . 10,800 parts In-Stock

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$0.190

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$0.180

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$0.180

10,800

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$0.190

$0.180

$0.180

Assy Fe

Spain . 8,003 parts In-Stock

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8,003

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TANS Electronics

Latvia . 5,806 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,381 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Problanco Electronics

Mexico . 4,959 parts In-Stock

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Kulean Microsystems

USA . 4,452 parts In-Stock

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4,452

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SupplyDigital Components

Austria . 2,614 parts In-Stock

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2,614

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Argo Parts USA

USA . 1,265 parts In-Stock

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1,265

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UHIMA Technologies

Türkiye . 369 parts In-Stock

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369

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Perfect Parts

USA . 265 parts In-Stock

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265

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Bastille Electronics

Australia . 22 parts In-Stock

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22

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Overview

Discover the MPS650 by Onsemi, a small signal bipolar junction transistor that guarantees exceptional quality and performance. As a leading manufacturer in the industry, Onsemi is renowned for its commitment to excellence and innovation. With its NPN polarity and single configuration, this transistor is ideal for amplifier applications. The MPS650 offers incredible value, providing customers with unmatched benefits and advantages. Its robust package body material ensures durability, while its maximum power dissipation and collector current capabilities allow for efficient operation. Don't miss out on the opportunity to elevate your projects with the MPS650 by Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This transistor's plastic/epoxy body material provides durability and enhances its resistance to external environmental factors, making it suitable for various applications.

Polarity or Channel Type: NPN

With NPN polarity, this transistor offers high current amplification and low output impedance, enabling efficient signal amplification in electronic circuits.

Configuration: SINGLE

The single configuration of this transistor simplifies circuit design and installation, allowing for straightforward integration into amplification systems.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes, this transistor ensures accurate and reliable signal amplification in audio systems, radios, and other amplifier circuits.

Package Shape: ROUND

The round package shape of this transistor facilitates easy mounting and reduces the risk of damage during installation, making it convenient for circuit board assembly.

Terminal Form: THROUGH-HOLE

With through-hole terminals, this transistor offers secure and reliable connections, allowing for easy soldering and ensuring stable electrical connections in various applications.

No. of Elements: 1

Featuring a single element, this transistor simplifies circuit integration, resulting in reduced complexity and improved overall system performance.

No. of Terminals: 3

The three terminals of this transistor enable easy interfacing with external components, offering versatile connectivity options for efficient circuit integration.

Maximum Power Dissipation (Abs): 0.625 W

With a maximum power dissipation of 0.625 W, this transistor can handle moderate power levels, ensuring reliable and safe operation in amplifier circuits.

Package Style (Meter): CYLINDRICAL

The cylindrical package style of this transistor allows for efficient space utilization in compact electronic devices, making it ideal for applications with size constraints.

Minimum DC Current Gain (hFE): 40

With a minimum DC current gain of 40, this transistor provides reliable amplification and ensures stable signal processing, enhancing overall system performance.

Maximum Operating Temperature: 150 °C

Supporting a maximum operating temperature of 150°C, this transistor can withstand high-temperature environments without compromising its functionality, ensuring long-term reliability.

Maximum Collector-Emitter Voltage: 40 V

The maximum collector-emitter voltage of 40 V allows this transistor to handle a wide range of voltage levels, making it suitable for various circuit configurations.

Transistor Element Material: SILICON

Constructed using silicon as the transistor element material, this product exhibits excellent electrical performance, low noise, and high-speed switching characteristics, ensuring accurate signal amplification.

Maximum Collector Current (IC): 2 A

With a maximum collector current of 2 A, this transistor can handle high current loads, making it suitable for demanding applications that require robust amplification capabilities.

Terminal Finish: TIN LEAD

The tin lead terminal finish of this transistor provides enhanced electrical conductivity and corrosion resistance, ensuring reliable and long-lasting connections in electronic circuits.

Terminal Position: BOTTOM

With the terminal positioned at the bottom, this transistor allows for easy and secure mounting on circuit boards, optimizing space utilization and facilitating efficient circuit integration.

Peak Reflow Temperature °C: 235

The peak reflow temperature of 235°C ensures stable soldering and secure component attachment during the manufacturing process, guaranteeing high-quality product assembly.

Nominal Transition Frequency (fT): 75 MHz

With a nominal transition frequency of 75 MHz, this transistor is capable of accurately amplifying high-frequency signals, making it suitable for applications requiring efficient signal processing in the megahertz range.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS650 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS650 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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