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MMBT3904Q-7-F

Diodes Incorporated

MMBT3904Q-7-F by Diodes Incorporated

MMBT3904Q-7-F by Diodes Inc. is a NPN BJT transistor for switching applications. It has a VCEsat of 0.3V, hFE of 30, and can handle IC up to 0.2A. With a max operating temperature of 150°C, it is ideal for small outline surface mount designs requiring fast switching speeds.

Median Price

$0.200

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 21,862 parts In-Stock

1+ parts

$0.200

100+ parts

$0.075

1k+ parts

$0.048

10k+ parts

$0.035

21,862

$0.200

$0.075

$0.048

$0.035

DigiKey

USA . 6,941 parts In-Stock

1+ parts

$0.200

100+ parts

$0.075

1k+ parts

$0.048

10k+ parts

$0.033

6,941

$0.200

$0.075

$0.048

$0.033

Adafruit Industries

USA . 500 parts In-Stock

1+ parts

$0.343

100+ parts

$0.326

1k+ parts

$0.326

10k+ parts

-

500

$0.343

$0.326

$0.326

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Avnet

USA . 24,000 parts In-Stock

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24,000

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Arrow

USA . 15,000 parts In-Stock

1+ parts

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$0.031

15,000

-

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$0.031

Verical

USA . 15,000 parts In-Stock

1+ parts

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$0.031

15,000

-

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$0.031

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 99 parts In-Stock

1+ parts

$0.045

100+ parts

-

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99

$0.045

-

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Chip Stock

USA . 1,512,500 parts In-Stock

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1,512,500

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Cyclops Electronics Ltd

UK . 1,500,000 parts In-Stock

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1,500,000

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IBS Electronics

USA . 1,080,000 parts In-Stock

1+ parts

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$0.078

1,080,000

-

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$0.078

Vyrian

USA . 121,653 parts In-Stock

1+ parts

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121,653

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NAC Semi

USA . 102,000 parts In-Stock

1+ parts

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$0.130

102,000

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$0.130

ComSIT Distribution GmbH

Germany . 180 parts In-Stock

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180

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 119,232 parts In-Stock

1+ parts

$0.012

100+ parts

-

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119,232

$0.012

-

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Semicontronic

India . 103,013 parts In-Stock

1+ parts

$0.012

100+ parts

$0.012

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$0.012

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103,013

$0.012

$0.012

$0.012

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Continental Prestige Electronics

USA . 4,621 parts In-Stock

1+ parts

$0.044

100+ parts

-

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$0.043

4,621

$0.044

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-

$0.043

Argo Parts USA

USA . 3,049 parts In-Stock

1+ parts

$0.044

100+ parts

-

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$0.043

3,049

$0.044

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-

$0.043

Modulus Dynamics

Lithuania . 65 parts In-Stock

1+ parts

$0.050

100+ parts

$0.049

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$0.048

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-

65

$0.050

$0.049

$0.048

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Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$0.343

100+ parts

$0.326

1k+ parts

$0.326

10k+ parts

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500

$0.343

$0.326

$0.326

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Corohmni

South Africa . 6 parts In-Stock

1+ parts

$0.958

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-

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6

$0.958

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Aztec Data Supply Inc.

USA . 239 parts In-Stock

1+ parts

$1.596

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239

$1.596

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Authorized Procurement Solutions

USA . 90,000 parts In-Stock

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Lixinc

USA . 13,195 parts In-Stock

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Futuretech Components

Singapore . 964 parts In-Stock

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964

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Robosynatics

Brazil . 300 parts In-Stock

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$0.830

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$0.830

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$0.830

300

-

$0.830

$0.830

$0.830

Lucentia Tech

USA . 300 parts In-Stock

1+ parts

-

100+ parts

$0.830

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$0.830

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$0.830

300

-

$0.830

$0.830

$0.830

Formix International (Excess)

India . 250 parts In-Stock

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250

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Bastille Electronics

Australia . 74 parts In-Stock

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Overview

Unlock the potential of your electronic designs with the MMBT3904Q-7-F from Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated delivers high-quality small signal bipolar junction transistors that are perfect for switching applications. With a low VCEsat of just 0.3V and a maximum operating temperature of 150°C, this NPN transistor offers superior performance and reliability. Whether you're working on consumer electronics or industrial equipment, the MMBT3904Q-7-F provides the value, benefits, and advantages you need to take your projects to the next level. Trust Diodes Incorporated for all your semiconductor needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material for the package body, providing good protection for the transistor.

Polarity or Channel Type: NPN

Suitable for use in a wide variety of applications, including amplification and switching.

Configuration: SINGLE

Simplified design and easy to use in circuits.

Transistor Application: SWITCHING

Designed for efficient switching applications with fast turn-on and turn-off times.

Surface Mount: YES

Easy to mount on circuit boards, saving space and simplifying assembly.

Maximum VCEsat: 0.3 V

Low saturation voltage helps in reducing power dissipation and improving efficiency.

Package Shape: RECTANGULAR

Compact design for easy integration into circuits.

No. of Terminals: 3

Simple connection setup for circuits.

Maximum Power Dissipation (Abs): 0.35 W

Can handle moderate power levels for various applications.

Package Style (Meter): SMALL OUTLINE

Space-saving design suitable for compact electronic devices.

Minimum DC Current Gain (hFE): 30

Provides sufficient amplification for signal processing.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures for reliable performance in various environments.

Maximum Collector-Base Capacitance: 4 pF

Low capacitance ensures minimal impact on high-frequency signal processing.

Maximum Collector-Emitter Voltage: 40 V

Suitable for use in low to moderate voltage circuits.

Transistor Element Material: SILICON

High-quality material for the transistor element, ensuring good performance and reliability.

Maximum Turn On Time (ton): 70 ns

Fast turn-on time for quick signal processing.

Minimum Operating Temperature: -55 °C

Can operate in extreme cold conditions for wide range of applications.

Maximum Collector Current (IC): 0.2 A

Suitable for low current applications.

Maximum Turn Off Time (toff): 250 ns

Quick turn-off time for efficient switching.

Terminal Finish: MATTE TIN

High-quality terminal finish for reliable connections.

Terminal Position: DUAL

Provides flexibility in circuit connection setups.

Maximum Time At Peak Reflow Temperature (s): 30

Optimal reflow time for soldering during assembly.

Peak Reflow Temperature °C: 260

High reflow temperature capability for reliable solder joints.

Reference Standard: AEC-Q101

Meets automotive industry standards for quality and reliability.

Nominal Transition Frequency (fT): 300 MHz

High transition frequency for fast signal processing in high-frequency circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMBT3904Q-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

4 pF

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

250 ns

Maximum Turn On Time (ton):

70 ns

Maximum VCEsat:

.3 V

Trade Compliance

MMBT3904Q-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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