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MPSW45ARLRAG

Onsemi

MPSW45ARLRAG by Onsemi

MPSW45ARLRAG by Onsemi is a NPN Darlington transistor with hFE of 4000, VCE of 50V, and IC of 1A. Ideal for amplifier applications due to its high gain and current capabilities. Its cylindrical package with through-hole terminals makes it suitable for various electronic designs.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 2,401 parts In-Stock

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Digiode

USA . 509 parts In-Stock

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509

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AZTECH Wire

Italy . 915 parts In-Stock

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$18.700

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915

$18.700

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Perfect Parts

USA . 7,918 parts In-Stock

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Kulean Microsystems

USA . 7,311 parts In-Stock

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Problanco Electronics

Mexico . 3,156 parts In-Stock

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Corphita

USA . 2,225 parts In-Stock

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SupplyDigital Components

Austria . 1,585 parts In-Stock

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UHIMA Technologies

Türkiye . 640 parts In-Stock

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640

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TANS Electronics

Latvia . 390 parts In-Stock

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Corohmni

South Africa . 144 parts In-Stock

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Overview

Enhance your electronic designs with the MPSW45ARLRAG small signal bipolar junction transistor from Onsemi. Known for their superior quality and reliability, Onsemi products are trusted by engineers worldwide. This NPN Darlington transistor is perfect for amplifier applications, offering a high DC current gain of 4000 and a maximum collector-emitter voltage of 50V. With a package style designed for easy installation and a peak reflow temperature of 260 °C, this transistor provides exceptional performance and durability. Elevate your projects with the MPSW45ARLRAG and experience the unmatched value it brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: DARLINGTON

Darlington configuration provides high current gain, making the transistor suitable for applications requiring high amplification.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in such circuits.

Package Shape: ROUND

Round shape allows for efficient mounting and placement in circuit boards.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering.

No. of Terminals: 3

Three terminals allow for proper connection in amplifier circuits.

Package Style (Meter): CYLINDRICAL

Cylindrical package style provides a compact and efficient design for the transistor.

Minimum DC Current Gain (hFE): 4000

High DC current gain ensures efficient amplification and performance in amplifier circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, the transistor can withstand heat stress in various applications.

Maximum Collector-Emitter Voltage: 50 V

Allows for operation at higher voltages without risk of damage.

Transistor Element Material: SILICON

Silicon material provides reliable and consistent performance for the transistor.

Maximum Collector Current (IC): 1 A

High collector current allows for handling larger currents in amplifier circuits.

Terminal Finish: TIN SILVER COPPER

Provides reliable and corrosion-resistant terminal finish for secure connections.

Terminal Position: BOTTOM

Bottom terminal position allows for easy mounting and connections in circuit boards.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during soldering processes.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency allows for efficient operation in amplifier circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSW45ARLRAG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

4000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSW45ARLRAG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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