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MPSW45RLREG

Onsemi

MPSW45RLREG by Onsemi

MPSW45RLREG by Onsemi is a NPN Darlington BJT with 1W power dissipation, hFE of 4000, and max IC of 1A. Ideal for applications requiring high current amplification in through-hole configurations at up to 150 °C operating temperature.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 7,835 parts In-Stock

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Digiode

USA . 1,632 parts In-Stock

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AZTECH Wire

Italy . 643 parts In-Stock

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$16.170

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Component Stockers USA

USA . 465 parts In-Stock

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$99.990

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TANS Electronics

Latvia . 8,087 parts In-Stock

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SupplyDigital Components

Austria . 7,418 parts In-Stock

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Kulean Microsystems

USA . 5,499 parts In-Stock

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Problanco Electronics

Mexico . 5,093 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 5,073 parts In-Stock

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Corphita

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Corohmni

South Africa . 358 parts In-Stock

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UHIMA Technologies

Türkiye . 263 parts In-Stock

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Overview

Upgrade your electronic projects with the MPSW45RLREG Small Signal Bipolar Junction Transistor by Onsemi. With a powerful NPN configuration and a high DC current gain of 4000, this Darlington transistor offers reliable performance in a variety of applications. Whether you're working on amplifiers, drivers, or switches, this transistor's maximum power dissipation of 1W and maximum collector current of 1A ensure optimal efficiency. Trust Onsemi's quality manufacturing to deliver a durable product that will enhance your designs. Choose the MPSW45RLREG for superior performance and value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection for the internal components and makes the transistor durable.

Polarity or Channel Type: NPN

Commonly used and versatile type of transistor that allows for easy integration into different circuit designs.

Configuration: DARLINGTON

High current gain and low saturation voltage, suitable for applications requiring high amplification.

Package Shape: ROUND

Compact and space-saving design, ideal for applications with limited space.

Maximum Power Dissipation (Abs): 1 W

Can handle moderate power levels, suitable for a wide range of low to medium power applications.

Minimum DC Current Gain (hFE): 4000

High current gain ensures efficient amplification and performance in various circuits.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance, suitable for industrial applications.

Transistor Element Material: SILICON

Highly reliable and commonly used semiconductor material in transistors.

Maximum Collector Current (IC): 1 A

Capable of handling moderate current levels, suitable for a variety of applications.

Terminal Finish: TIN SILVER COPPER

Provides a reliable and low-resistance connection to the circuit board for efficient performance.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency allows for fast switching speeds, ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSW45RLREG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Configuration:

Minimum DC Current Gain (hFE):

4000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSW45RLREG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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