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MPSA75RLRAG

Onsemi

MPSA75RLRAG by Onsemi

MPSA75RLRAG by Onsemi is a PNP Darlington BJT transistor with hFE of 10000, VCEO of 40V, and IC of 0.5A. Ideal for amplifier applications due to its high gain and temperature range up to 150 °C. Packaged in cylindrical shape with through-hole terminals for easy installation.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,884 parts In-Stock

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Digiode

USA . 913 parts In-Stock

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AZTECH Wire

Italy . 533 parts In-Stock

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533

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QUARKTWIN TECHNOLOGY LTD

USA . 23,228 parts In-Stock

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Problanco Electronics

Mexico . 4,480 parts In-Stock

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Kulean Microsystems

USA . 2,978 parts In-Stock

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TANS Electronics

Latvia . 1,895 parts In-Stock

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SupplyDigital Components

Austria . 1,869 parts In-Stock

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Corphita

USA . 916 parts In-Stock

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UHIMA Technologies

Türkiye . 536 parts In-Stock

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Corohmni

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Overview

Enhance your electronic projects with the MPSA75RLRAG by Onsemi, a top-quality Small Signal Bipolar Junction Transistor (BJT) designed for superior performance. Manufactured by Onsemi, a renowned leader in the industry, this PNP Darlington transistor offers reliability and precision, making it ideal for amplifier applications. With a high DC current gain, maximum operating temperature of 150 °C, and peak reflow temperature of 260°C, this transistor delivers exceptional value and efficiency. Upgrade your designs with the MPSA75RLRAG and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used for amplification and switching applications, making this transistor versatile in use.

Configuration: DARLINGTON

Darlington configuration provides high current gain and low saturation voltage, making this transistor suitable for high-power amplification.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplification circuits.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance, making it suitable for industrial and automotive applications.

Maximum Collector-Emitter Voltage: 40 V

With a high maximum voltage rating, this transistor can handle higher voltage levels in circuits.

Maximum Collector Current (IC): 0.5 A

Capable of handling up to 0.5 A of current, making it suitable for medium-power applications.

Nominal Transition Frequency (fT): 125 MHz

With a high transition frequency, this transistor is suitable for high-frequency applications such as RF amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSA75RLRAG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

10000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSA75RLRAG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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