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MPSW63G

Onsemi

MPSW63G by Onsemi

MPSW63G by Onsemi is a PNP BJT with 1W power dissipation, hFE of 10000, and IC of 0.5A. Ideal for applications requiring high DC current gain like amplifiers or signal processing circuits due to its Darlington configuration and SILICON material.

Median Price

$0.092

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 595 parts In-Stock

1+ parts

-

100+ parts

$0.092

1k+ parts

$0.077

10k+ parts

$0.068

595

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$0.092

$0.077

$0.068

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,121 parts In-Stock

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$0.072

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$0.072

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Vyrian

USA . 3,273 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 2,171 parts In-Stock

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$0.068

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$0.068

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Corohmni

South Africa . 94 parts In-Stock

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$0.076

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94

$0.076

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AZTECH Wire

Italy . 154 parts In-Stock

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$12.410

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154

$12.410

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QUARKTWIN TECHNOLOGY LTD

USA . 11,460 parts In-Stock

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Kulean Microsystems

USA . 6,989 parts In-Stock

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SupplyDigital Components

Austria . 6,328 parts In-Stock

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TANS Electronics

Latvia . 1,777 parts In-Stock

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Problanco Electronics

Mexico . 566 parts In-Stock

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UHIMA Technologies

Türkiye . 453 parts In-Stock

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Overview

Discover the exceptional performance and reliability of the MPSW63G by Onsemi, a top-quality Small Signal Bipolar Junction Transistor (BJT) designed for a wide range of applications. With its PNP polarity, Darlington configuration, and maximum collector current of 0.5 A, this transistor offers unmatched value and efficiency. Whether you need to amplify signals or control electrical circuits, the MPSW63G delivers outstanding results with its high DC current gain and maximum power dissipation of 1 W. Trust Onsemi's reputation for excellence and choose the MPSW63G for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification and switching circuits, offering versatility in circuit design.

Configuration: DARLINGTON

Darlington configuration provides high current gain, making this transistor suitable for applications requiring high amplification.

Maximum Power Dissipation (Abs): 1 W

With a high power dissipation capability, this transistor can handle moderate power levels without overheating.

Maximum Collector Current (IC): 0.5 A

The high collector current rating allows this transistor to be used in circuits that require higher current handling capabilities.

Nominal Transition Frequency (fT): 125 MHz

High transition frequency enables this transistor to operate at high frequencies, making it suitable for RF applications or high-speed switching.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSW63G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

10000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSW63G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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