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BC517ZL1G

Onsemi

BC517ZL1G by Onsemi

BC517ZL1G by Onsemi is a NPN Darlington transistor with hFE of 30,000. It operates up to 150°C with VCE of 30V and IC of 1A. Ideal for amplifier applications due to its high gain and current capabilities in a cylindrical package.

Median Price

$0.091

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 9,000 parts In-Stock

1+ parts

$0.090

100+ parts

$0.090

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$0.090

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9,000

$0.090

$0.090

$0.090

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Arrow

USA . 7 parts In-Stock

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$0.092

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7

$0.092

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Distributors (In-Stock)

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Digiode

USA . 817 parts In-Stock

1+ parts

$0.087

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817

$0.087

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Vyrian

USA . 5,841 parts In-Stock

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5,841

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Connector Distribution Corp

USA . 1,500 parts In-Stock

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1,500

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Right Parts Inc.

USA . 1,500 parts In-Stock

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1,500

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VNN

France . 45 parts In-Stock

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45

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Nova Conductors

Japan . 44 parts In-Stock

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44

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1 parts In-Stock

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$0.078

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1

$0.078

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Corphita

USA . 1,971 parts In-Stock

1+ parts

$0.083

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1,971

$0.083

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Corohmni

South Africa . 317 parts In-Stock

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$0.092

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317

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Aztec Data Supply Inc.

USA . 1,438 parts In-Stock

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$1.162

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1,438

$1.162

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AZTECH Wire

Italy . 793 parts In-Stock

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$10.695

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Kulean Microsystems

USA . 6,988 parts In-Stock

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TANS Electronics

Latvia . 6,933 parts In-Stock

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Argo Parts USA

USA . 4,510 parts In-Stock

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Perfect Parts

USA . 3,154 parts In-Stock

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SupplyDigital Components

Austria . 2,880 parts In-Stock

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2,880

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Problanco Electronics

Mexico . 1,608 parts In-Stock

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1,608

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Continental Prestige Electronics

USA . 1,079 parts In-Stock

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1,079

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UHIMA Technologies

Türkiye . 336 parts In-Stock

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336

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Bastille Electronics

Australia . 200 parts In-Stock

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200

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Overview

Enhance your electronic circuits with the BC517ZL1G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor. Manufactured by Onsemi, a trusted industry leader, this NPN transistor in a Darlington configuration is ideal for amplifier applications. With a minimum DC current gain of 30,000 and a maximum operating temperature of 150°C, this transistor offers exceptional performance and reliability. Upgrade your designs with the BC517ZL1G and experience superior functionality and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, ensuring reliable performance.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifiers and signal processing circuits, making this product versatile for various applications.

Configuration: DARLINGTON

Darlington configuration offers high current gain, making this transistor suitable for applications where high amplification is required.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplifying signals.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures, making it suitable for industrial and automotive applications.

Maximum Collector-Emitter Voltage: 30 V

Supports a relatively high voltage, allowing for use in circuits that require higher voltage levels.

Nominal Transition Frequency (fT): 200 MHz

With a high transition frequency, this transistor is ideal for high-frequency applications such as RF amplification and communication circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC517ZL1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

30000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC517ZL1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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