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BC517RLRE

Onsemi

BC517RLRE by Onsemi

BC517RLRE by Onsemi is a NPN Darlington transistor with hFE of 30k, IC of 1A, and fT of 200MHz. Ideal for small signal applications in electronics due to its high gain and current capabilities. Package style is cylindrical with through-hole terminals for easy mounting.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,881 parts In-Stock

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1,881

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Digiode

USA . 385 parts In-Stock

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385

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 104 parts In-Stock

1+ parts

$0.361

100+ parts

-

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$0.347

104

$0.361

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$0.347

Northwest PG Solutions

USA . 2,196 parts In-Stock

1+ parts

$0.397

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-

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$0.350

2,196

$0.397

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$0.350

SupplyDigital Components

Austria . 8,203 parts In-Stock

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8,203

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Kulean Microsystems

USA . 4,550 parts In-Stock

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4,550

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TANS Electronics

Latvia . 1,906 parts In-Stock

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1,906

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Corphita

USA . 1,667 parts In-Stock

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1,667

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Problanco Electronics

Mexico . 545 parts In-Stock

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545

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UHIMA Technologies

Türkiye . 327 parts In-Stock

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327

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Corohmni

South Africa . 300 parts In-Stock

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300

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Overview

Enhance your electronic projects with the BC517RLRE by Onsemi, a high-quality Small Signal Bipolar Junction Transistor. Manufactured by Onsemi, known for their reliable and innovative products, this NPN Darlington transistor offers exceptional performance in a variety of applications. With a DC current gain of 30,000 and a maximum operating temperature of 150 °C, this transistor delivers superior functionality and durability. Trust Onsemi's expertise and invest in the BC517RLRE for your next project to experience unmatched value and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

Commonly used in amplification and switching circuits, offering versatility in circuit design.

Configuration: DARLINGTON

Offers high current gain and low saturation voltage, making it ideal for applications requiring high power amplification.

Maximum Operating Temperature: 150 °C

Can operate in a wide range of temperatures, making it suitable for various environments and applications.

Maximum Collector Current (IC): 1 A

Can handle high current levels, making it suitable for power applications.

Nominal Transition Frequency (fT): 200 MHz

Provides high frequency performance, making it suitable for high-speed applications such as radio frequency circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC517RLRE attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Configuration:

Minimum DC Current Gain (hFE):

30000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC517RLRE Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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