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BC517

Onsemi

BC517 by Onsemi

BC517 by Onsemi is a NPN Darlington transistor with hFE of 30,000 and IC of 1A. Ideal for amplifier applications, it operates up to 150°C with fT of 200MHz. Its through-hole package makes it suitable for various electronic designs.

Median Price

$1.230

Lifecycle Status

Suppliers In-Stock

32

In-Stock Inventory

1k+

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Forefront Electronics and Design

USA . 20 parts In-Stock

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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Mil-Aero Solutions, Inc.

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Pegasus Components GmbH

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Digiode

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Anansix

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Fibra_Brandt Electronic GMBH

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Sinequanon

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Holdelec - ElecDif-Pro

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Italy . 2,099 parts In-Stock

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ComSIT Distribution GmbH

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LIBRA Elektronik GmbH

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Corel Iberica Componentes, S.L.

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Semi Source

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LittleDiode

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Sweden . 810 parts In-Stock

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Nova Conductors

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Germany . 166 parts In-Stock

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Canada . 150 parts In-Stock

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ICP Electronique

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Aztec Data Supply Inc.

USA . 190 parts In-Stock

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$0.862

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Corohmni

South Africa . 225 parts In-Stock

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$1.230

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Modulus Dynamics

Lithuania . 10,008 parts In-Stock

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$1.812

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$1.740

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$1.667

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Advanced Electronics

New Zealand . 270 parts In-Stock

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$2.257

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$2.054

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$1.851

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AZTECH Wire

Italy . 619 parts In-Stock

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$17.327

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One Stop Electronics

USA . 131 parts In-Stock

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$27.050

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Semicontronic

India . 712 parts In-Stock

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$33.050

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$32.224

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$32.058

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Component Stockers USA

USA . 770 parts In-Stock

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$99.990

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Metaverse IC Inc.

Canada . 60,400 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Perfect Parts

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Authorized Procurement Solutions

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Assy Fe

Spain . 9,063 parts In-Stock

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TANS Electronics

Latvia . 5,505 parts In-Stock

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SupplyDigital Components

Austria . 5,080 parts In-Stock

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Corphita

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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A-Z Elektronik GmbH

Germany . 3,583 parts In-Stock

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UNI Independent Distributors

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Supply Digital

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Continental Prestige Electronics

USA . 1,840 parts In-Stock

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Computer Components Inc. - USA

USA . 1,520 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 1,379 parts In-Stock

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Lixinc

USA . 961 parts In-Stock

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Argo Parts USA

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Bastille Electronics

Australia . 200 parts In-Stock

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GreenTree Electronics

Israel . 125 parts In-Stock

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Problanco Electronics

Mexico . 82 parts In-Stock

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Kulean Microsystems

USA . 38 parts In-Stock

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UHIMA Technologies

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Overview

Enhance your amplifier designs with the BC517 from Onsemi, a leading manufacturer of high-quality Small Signal Bipolar Junction Transistors (BJT). With its NPN polarity and Darlington configuration, this transistor offers reliable performance for a wide range of applications. The BC517 features a high DC current gain of 30000 and a maximum collector current of 1A, making it a versatile choice for amplification needs. Trust in Onsemi's reputation for excellence and experience the value and benefits that the BC517 brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation properties and ensures durability, making the transistor reliable for long-term use.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier circuits, making this product suitable for amplifier applications.

Configuration: DARLINGTON

Darlington configuration provides high current gain, making this transistor suitable for applications requiring high amplification.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplification circuits.

Package Shape: ROUND

The round package shape allows for easy mounting and installation in different circuit layouts.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and easy soldering, ensuring a reliable electrical connection in the circuit.

No. of Terminals: 3

Three terminals allow for easy connection in a circuit and enable the transistor to perform its amplification function effectively.

Package Style (Meter): CYLINDRICAL

The cylindrical package style provides a compact design, making it suitable for space-constrained applications.

Minimum DC Current Gain (hFE): 30000

High minimum DC current gain ensures efficient amplification and signal processing in the circuit.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperature conditions, ensuring stable performance.

Transistor Element Material: SILICON

Silicon material provides good electrical properties and reliability, making the transistor suitable for various electronic applications.

Maximum Collector Current (IC): 1 A

With a maximum collector current of 1A, this transistor can handle high current loads, making it suitable for power applications.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and ensures a secure electrical connection, enhancing the reliability of the transistor in the circuit.

Terminal Position: BOTTOM

Bottom terminal position allows for easy PCB mounting and soldering, ensuring a stable connection in the circuit.

Peak Reflow Temperature °C: 235

High peak reflow temperature allows for reliable soldering and rework processes, ensuring a durable connection in the circuit.

Nominal Transition Frequency (fT): 200 MHz

High nominal transition frequency allows for fast signal processing and amplification, making this transistor suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC517 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Configuration:

Minimum DC Current Gain (hFE):

30000

JEDEC-95 Code:

TO-226AA

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC517 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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