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BC517RLRA

Onsemi

BC517RLRA by Onsemi

BC517RLRA by Onsemi is a NPN Darlington transistor with a min DC current gain of 30,000 and max collector current of 1A. Operating at up to 150 °C, it has a nominal transition frequency of 200MHz. Ideal for small signal applications requiring high gain and current amplification in through-hole configurations.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,070 parts In-Stock

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Vyrian

USA . 240 parts In-Stock

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240

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Distributors (Availability)

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Native Components

USA . 102 parts In-Stock

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$0.114

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$0.109

102

$0.114

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$0.109

Northwest PG Solutions

USA . 496 parts In-Stock

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$0.125

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$0.110

496

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$0.110

Kulean Microsystems

USA . 3,731 parts In-Stock

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3,731

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Problanco Electronics

Mexico . 3,007 parts In-Stock

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3,007

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SupplyDigital Components

Austria . 1,264 parts In-Stock

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1,264

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UHIMA Technologies

Türkiye . 880 parts In-Stock

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880

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TANS Electronics

Latvia . 698 parts In-Stock

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Corphita

USA . 689 parts In-Stock

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Corohmni

South Africa . 60 parts In-Stock

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Overview

Unleash the power of innovation with the BC517RLRA by Onsemi, a high-quality Small Signal Bipolar Junction Transistor (BJT) that offers unmatched performance and reliability. Manufactured by Onsemi, a leader in semiconductor technology, this NPN Darlington transistor is ideal for a wide range of applications. Whether you're designing consumer electronics or industrial automation systems, the BC517RLRA delivers exceptional value, benefits, and advantages to meet your needs. Trust Onsemi to provide cutting-edge solutions that drive your success.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection for the transistor, making it durable and reliable for various applications.

Polarity or Channel Type: NPN

Commonly used type of transistor, ensuring compatibility with a wide range of circuits and devices.

Configuration: DARLINGTON

Offers high current gain and low saturation voltage, making it suitable for high-power applications.

Package Shape: ROUND

Easy to mount and install in various types of circuit layouts.

Terminal Form: THROUGH-HOLE

Enables easy soldering onto circuit boards and provides a secure connection.

No. of Terminals: 3

Simplifies the connection process and reduces the risk of wiring errors.

Package Style (Meter): CYLINDRICAL

Compact design for space-saving applications.

Minimum DC Current Gain (hFE): 30000

High current gain ensures efficient signal amplification.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments without performance degradation.

Transistor Element Material: SILICON

Provides high efficiency and reliability in various electronic circuits.

Maximum Collector Current (IC): 1 A

Suitable for driving medium-power loads in electronic circuits.

Terminal Finish: TIN LEAD

Ensures a reliable electrical connection and protects against corrosion.

Terminal Position: BOTTOM

Facilitates easy mounting on PCBs and simplifies circuit design.

Nominal Transition Frequency (fT): 200 MHz

Can switch signals at high frequencies, making it suitable for RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC517RLRA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Configuration:

Minimum DC Current Gain (hFE):

30000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC517RLRA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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