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BC517G

Onsemi

BC517G by Onsemi

BC517G by Onsemi is a NPN Darlington transistor with hFE of 30,000. It operates up to 150°C and has a VCE of 30V, making it ideal for amplifier applications. This through-hole transistor has a cylindrical package style with 3 terminals.

Median Price

$0.095

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

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Nova Conductors

Japan . 183 parts In-Stock

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$0.095

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Digiode

USA . 4,537 parts In-Stock

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4,537

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VNN

France . 3,882 parts In-Stock

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Pegasus Components GmbH

Germany . 3,838 parts In-Stock

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Anansix

USA . 2,598 parts In-Stock

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Vyrian

USA . 1,993 parts In-Stock

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ComSIT Distribution GmbH

Germany . 975 parts In-Stock

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Distributors (Availability)

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Netroflash

USA . 2,500 parts In-Stock

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$0.095

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$0.090

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$0.088

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$0.095

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$0.090

$0.088

AZTECH Wire

Italy . 1,127 parts In-Stock

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$10.514

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One Stop Electronics

USA . 1,165 parts In-Stock

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$42.100

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$42.100

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Ampacity Inc.

Singapore . 2,448 parts In-Stock

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$87.100

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Component Stockers USA

USA . 273 parts In-Stock

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$99.990

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Continental Prestige Electronics

USA . 11,572 parts In-Stock

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Perfect Parts

USA . 6,666 parts In-Stock

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Kepictronics

USA . 5,570 parts In-Stock

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Corphita

USA . 5,250 parts In-Stock

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Computer Components Inc. - USA

USA . 4,750 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,544 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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Infinite Electronics LLP (Excess)

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TANS Electronics

Latvia . 3,537 parts In-Stock

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Argo Parts USA

USA . 3,338 parts In-Stock

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SupplyDigital Components

Austria . 3,264 parts In-Stock

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UNI Independent Distributors

Spain . 3,107 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,029 parts In-Stock

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UHIMA Technologies

Türkiye . 396 parts In-Stock

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Problanco Electronics

Mexico . 228 parts In-Stock

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Kulean Microsystems

USA . 213 parts In-Stock

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Corohmni

South Africa . 171 parts In-Stock

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Overview

Enhance your electronic projects with the BC517G small signal bipolar junction transistor by Onsemi! Manufactured with top-quality materials and a darlington configuration, this NPN transistor is ideal for amplifier applications. With a high DC current gain of 30000 and a maximum operating temperature of 150°C, this transistor offers exceptional performance and reliability. Upgrade your designs with the BC517G and experience the value and benefits it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good thermal conduction and electrical insulation, making the transistor reliable and efficient in operation.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits due to their high input impedance and good linearity.

Configuration: DARLINGTON

Darlington configuration offers high current gain and low saturation voltage, making the transistor suitable for amplifier applications.

Transistor Application: AMPLIFIER

Specifically designed for amplification tasks, ensuring optimal performance in audio and signal processing circuits.

Package Shape: ROUND

Round package shape allows for easy handling and mounting in circular layouts, saving space in circuit design.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer mechanical stability and ease of soldering, making the transistor suitable for manual assembly.

No. of Terminals: 3

Three terminals provide flexibility in circuit connections, enabling versatile circuit designs.

Terminal Finish: TIN SILVER COPPER

Tin, silver, and copper terminal finish ensures good electrical conductivity and corrosion resistance, enhancing the transistor's reliability.

Maximum Collector-Emitter Voltage: 30 V

High maximum collector-emitter voltage rating allows for reliable operation in high voltage circuits, ensuring device protection.

Nominal Transition Frequency (fT): 200 MHz

High transition frequency enables the transistor to operate effectively in high-frequency applications, such as RF amplifiers.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC517G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

30000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC517G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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