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BC517ZL1

Onsemi

BC517ZL1 by Onsemi

BC517ZL1 by Onsemi is a NPN Darlington transistor with hFE of 30,000 and IC of 1A. Operating at max temp of 150°C, it has fT of 200MHz. Ideal for amplifier applications due to its high gain and current capabilities in a cylindrical package.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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VNN

France . 2,863 parts In-Stock

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Digiode

USA . 1,260 parts In-Stock

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Vyrian

USA . 717 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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Aztec Data Supply Inc.

USA . 1,086 parts In-Stock

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$0.493

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$0.493

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AZTECH Wire

Italy . 717 parts In-Stock

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$19.741

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717

$19.741

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Ampacity Inc.

Singapore . 639 parts In-Stock

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$30.050

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639

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Problanco Electronics

Mexico . 7,023 parts In-Stock

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SupplyDigital Components

Austria . 3,154 parts In-Stock

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Corphita

USA . 2,047 parts In-Stock

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Kulean Microsystems

USA . 1,112 parts In-Stock

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Continental Prestige Electronics

USA . 886 parts In-Stock

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Argo Parts USA

USA . 810 parts In-Stock

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TANS Electronics

Latvia . 497 parts In-Stock

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UHIMA Technologies

Türkiye . 256 parts In-Stock

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Corohmni

South Africa . 175 parts In-Stock

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Aranea Global

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Overview

Elevate your electronics projects with the BC517ZL1 by Onsemi, a high-quality Small Signal Bipolar Junction Transistor (BJT) in NPN configuration. Manufactured by industry leader Onsemi, this Darlington transistor is perfect for amplifier applications. With a minimum DC current gain of 30000 and a maximum collector current of 1A, this transistor offers unmatched performance and reliability. Whether you're a hobbyist or a professional, the BC517ZL1 provides exceptional value and versatility for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: DARLINGTON

Darlington configuration offers high current gain and is suitable for applications where high amplification is required.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplification circuits.

Package Shape: ROUND

Round package shape is convenient for mounting and provides a compact design for space-saving applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer easy and secure connections, making installation and assembly hassle-free.

No. of Terminals: 3

Three terminals provide necessary connections for proper functionality in amplifier circuits.

Minimum DC Current Gain (hFE): 30000

High DC current gain ensures efficient amplification with minimal input signal.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable performance in various operating conditions.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability, ensuring long-lasting functionality.

Maximum Collector Current (IC): 1 A

High collector current rating allows for handling of higher currents, making it suitable for amplifier applications.

Terminal Finish: TIN LEAD

Tin lead finish provides corrosion resistance and ensures secure connections for long-term reliability.

Terminal Position: BOTTOM

Bottom terminal position allows for easy mounting and connection, making installation convenient.

Peak Reflow Temperature °C: 235

High peak reflow temperature ensures reliable soldering during assembly processes.

Nominal Transition Frequency (fT): 200 MHz

High transition frequency allows for efficient switching and amplification of signals at higher frequencies.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC517ZL1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

1 A

Configuration:

Minimum DC Current Gain (hFE):

30000

JEDEC-95 Code:

TO-226AA

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC517ZL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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