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BC517RL1G

Onsemi

BC517RL1G by Onsemi

BC517RL1G by Onsemi is a NPN Darlington transistor with hFE of 30,000. It operates up to 150°C with VCE max of 30V and IC max of 1A. Ideal for amplifier applications due to its high gain and current capabilities in a cylindrical package.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,940 parts In-Stock

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VNN

France . 2,365 parts In-Stock

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2,365

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ComSIT Distribution GmbH

Germany . 2,000 parts In-Stock

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2,000

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LIBRA Elektronik GmbH

Germany . 2,000 parts In-Stock

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2,000

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Digiode

USA . 960 parts In-Stock

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960

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ACDS - Activité Composants Distribution Service

France . 876 parts In-Stock

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876

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Nova Conductors

Japan . 150 parts In-Stock

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150

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 3,657 parts In-Stock

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$0.953

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3,657

$0.953

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AZTECH Wire

Italy . 307 parts In-Stock

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$15.466

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307

$15.466

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Ampacity Inc.

Singapore . 1,289 parts In-Stock

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$33.050

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1,289

$33.050

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Semicontronic

India . 1,483 parts In-Stock

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$42.050

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$40.999

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$40.788

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1,483

$42.050

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$40.788

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Perfect Parts

USA . 28,953 parts In-Stock

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28,953

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QUARKTWIN TECHNOLOGY LTD

USA . 12,666 parts In-Stock

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Metaverse IC Inc.

Canada . 8,000 parts In-Stock

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Problanco Electronics

Mexico . 5,319 parts In-Stock

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Argo Parts USA

USA . 3,923 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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3,700

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SupplyDigital Components

Austria . 1,869 parts In-Stock

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TANS Electronics

Latvia . 1,690 parts In-Stock

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Kulean Microsystems

USA . 1,340 parts In-Stock

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Continental Prestige Electronics

USA . 878 parts In-Stock

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878

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Corphita

USA . 548 parts In-Stock

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548

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Corohmni

South Africa . 276 parts In-Stock

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276

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UHIMA Technologies

Türkiye . 210 parts In-Stock

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210

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Bastille Electronics

Australia . 10 parts In-Stock

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10

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Overview

Enhance your electronic projects with the BC517RL1G by Onsemi, a high-quality small signal bipolar junction transistor designed for amplifier applications. Manufactured by Onsemi, a trusted name in semiconductor technology, this NPN Darlington transistor offers superior performance and reliability. With a DC current gain of 30,000 and a maximum collector-emitter voltage of 30V, this transistor is perfect for amplifying signals with precision. Upgrade your designs with the BC517RL1G and experience unparalleled value and efficiency in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protects the transistor from external elements, ensuring long-term reliability.

Configuration: DARLINGTON

Offers high current gain and excellent linearity, making it suitable for amplifier applications.

Maximum Operating Temperature: 150 °C

Can operate in a wide range of temperatures, making it versatile for various environmental conditions.

Maximum Collector-Emitter Voltage: 30 V

Suitable for low voltage applications, providing efficient performance.

Minimum DC Current Gain (hFE): 30000

High current gain ensures amplification of weak signals with minimal distortion.

Maximum Collector Current (IC): 1 A

Allows for high current handling capacity, making it suitable for power amplification purposes.

Nominal Transition Frequency (fT): 200 MHz

High transition frequency ensures quick response times, advantageous for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC517RL1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

30000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC517RL1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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