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MPSA63G

Onsemi

MPSA63G by Onsemi

MPSA63G by Onsemi is a PNP BJT transistor with a Darlington configuration. It has a max power dissipation of 1.5W, hFE of 10000, and operates up to 150°C. Ideal for switching applications due to its high collector current of 0.5A and max voltage of 30V.

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1k+

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Chip Stock

USA . 44,000 parts In-Stock

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Vyrian

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Digiode

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Nova Conductors

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Semicontronic

India . 1,200 parts In-Stock

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$0.049

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AZTECH Wire

Italy . 781 parts In-Stock

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Ampacity Inc.

Singapore . 1,507 parts In-Stock

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Problanco Electronics

Mexico . 8,247 parts In-Stock

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TANS Electronics

Latvia . 7,893 parts In-Stock

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A-Z Elektronik GmbH

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Argo Parts USA

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Continental Prestige Electronics

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Kulean Microsystems

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Aranea Global

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Lixinc

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SupplyDigital Components

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Overview

Enhance your electronic projects with the Onsemi MPSA63G, a high-quality Small Signal Bipolar Junction Transistor. Manufactured by Onsemi, a trusted name in semiconductor technology, this PNP Darlington transistor is perfect for switching applications. With a maximum power dissipation of 1.5W and a minimum DC current gain of 10000, this transistor offers exceptional performance and reliability. Whether you're a hobbyist or a professional, the MPSA63G provides value, efficiency, and versatility for all your electronic needs. Upgrade your projects today with the Onsemi MPSA63G!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides good insulation and protection for the transistor, making it more durable and reliable in various environments.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching applications, making this transistor suitable for switching circuits.

Configuration: DARLINGTON

Darlington configuration provides high current gain and high input impedance, making this transistor ideal for switching applications where high power amplification is required.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and low power dissipation, making it efficient for control and amplification tasks.

Maximum Power Dissipation (Abs): 1.5 W

With a maximum power dissipation of 1.5W, this transistor can handle moderate power levels, making it suitable for a variety of switching applications.

Maximum Collector-Emitter Voltage: 30 V

The maximum collector-emitter voltage of 30V allows for higher voltage handling capabilities, making this transistor suitable for applications requiring higher voltage operation.

Minimum DC Current Gain (hFE): 10000

The high DC current gain of 10000 ensures efficient amplification and control of current flow, making this transistor ideal for high-performance applications.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5A, this transistor can handle moderate current levels, making it suitable for various switching and amplification tasks.

Nominal Transition Frequency (fT): 125 MHz

The high nominal transition frequency of 125MHz indicates fast response times and high-frequency capabilities, making this transistor suitable for high-speed switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSA63G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

10000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSA63G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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