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BC373G

Onsemi

BC373G by Onsemi

BC373G by Onsemi is a NPN Darlington transistor with 8000 min DC current gain, suitable for amplifier applications. It has a max collector-emitter voltage of 80V and can handle up to 1A of collector current. With a nominal transition frequency of 200MHz, it operates b/w -55 °C to 150°C effectively in various electronic circuits.

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Lifecycle Status

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4

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1k+

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Vyrian

USA . 7,447 parts In-Stock

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Digiode

USA . 1,211 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 241 parts In-Stock

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AZTECH Wire

Italy . 1,115 parts In-Stock

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TANS Electronics

Latvia . 7,433 parts In-Stock

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Problanco Electronics

Mexico . 5,550 parts In-Stock

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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Kulean Microsystems

USA . 3,670 parts In-Stock

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SupplyDigital Components

Austria . 3,373 parts In-Stock

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Corphita

USA . 2,292 parts In-Stock

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Northwest PG Solutions

USA . 755 parts In-Stock

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UHIMA Technologies

Türkiye . 728 parts In-Stock

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Native Components

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Corohmni

South Africa . 60 parts In-Stock

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Overview

Enhance your electronic designs with the BC373G by Onsemi, a high-quality NPN Darlington transistor ideal for amplifier applications. Manufactured by Onsemi, a trusted name in the industry, this small signal BJT offers exceptional performance and reliability. With a minimum DC current gain of 8000 and a maximum collector-emitter voltage of 80V, this transistor provides superior amplification capabilities. Its compact cylindrical package and through-hole terminals make it easy to integrate into your projects. Trust the BC373G to deliver outstanding results and take your designs to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification applications, making this product a good choice for amplifier circuits.

Configuration: DARLINGTON

Darlington configuration provides high current gain and is ideal for applications where high gain is required, such as in amplifiers.

Maximum Power Dissipation (Abs): 0.625 W

With a maximum power dissipation of 0.625 W, this transistor can handle moderate power levels, making it suitable for many amplifier applications.

Minimum DC Current Gain (hFE): 8000

The high minimum DC current gain of 8000 ensures efficient amplification and signal processing in electronic circuits.

Maximum Collector-Emitter Voltage: 80 V

The high maximum collector-emitter voltage of 80 V allows the transistor to operate in a wide range of voltage conditions, increasing its versatility.

Maximum Collector Current (IC): 1 A

With a maximum collector current of 1 A, this transistor can handle moderate to high current levels, making it suitable for various applications.

Nominal Transition Frequency (fT): 200 MHz

The high nominal transition frequency of 200 MHz indicates that this transistor can operate at high frequencies, making it suitable for fast-switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC373G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

8000

JEDEC-95 Code:

TO-226AA

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC373G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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