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BC372

Onsemi

BC372 by Onsemi

BC372 by Onsemi is a NPN Darlington BJT with 3 terminals and max power dissipation of 0.625W. With hFE of 8000, it operates at up to 150 °C and handles a max collector-emitter voltage of 100V. Ideal for applications requiring high DC current gain and low power dissipation in through-hole configurations.

Median Price

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Lifecycle Status

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ES Components

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Digiode

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Vyrian

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J2 Sourcing AB

Sweden . 92 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 70 parts In-Stock

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LittleDiode

UK . 66 parts In-Stock

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Manotoh

Italy . 50 parts In-Stock

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North Shore Components

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Beltway Electronics Company

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Native Components

USA . 720 parts In-Stock

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Corohmni

South Africa . 157 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 24,865 parts In-Stock

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Problanco Electronics

Mexico . 7,468 parts In-Stock

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SupplyDigital Components

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CPlus Electronics

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Glotronic Ltd.

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Northwest PG Solutions

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TANS Electronics

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Perfect Parts

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Kulean Microsystems

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Cyclops Electronics Ltd (Excess)

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Corphita

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UHIMA Technologies

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Overview

Upgrade your electronic projects with the BC372 from Onsemi, a high-quality Small Signal Bipolar Junction Transistor (BJT) that offers superior performance and reliability. With its NPN polarity and Darlington configuration, this transistor is perfect for a wide range of applications. From amplifiers to power supplies, the BC372 delivers exceptional value and benefits to customers, providing a maximum collector-emitter voltage of 100V and a minimum DC current gain of 8000. Trust in Onsemi's reputation for excellence and choose the BC372 for all your circuit design needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

Commonly used type of transistor that allows for easily controlled amplification of signals.

Configuration: DARLINGTON

Offers high current gain and low saturation voltage, making it ideal for applications requiring high amplification.

Maximum Power Dissipation (Abs): 0.625 W

Can handle moderate power levels, suitable for many small signal applications.

Maximum Collector-Emitter Voltage: 100 V

Can handle higher voltages, expanding the range of applications for which the transistor can be used.

Minimum DC Current Gain (hFE): 8000

High current gain allows for efficient signal amplification in various circuit designs.

Maximum Operating Temperature: 150 °C

Can operate in high temperature environments, increasing the versatility of the transistor.

Nominal Transition Frequency (fT): 200 MHz

Provides high frequency response, making it suitable for applications requiring fast switching speeds.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC372 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

8000

JEDEC-95 Code:

TO-226AA

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC372 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-495-7339, 5961014957339, 5961-14-504-4231, 5961145044231

NIIN

014957339, 145044231

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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