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BC372G

Onsemi

BC372G by Onsemi

BC372G by Onsemi is a NPN Darlington transistor with 3 terminals and a max power dissipation of 0.625W. With a min DC current gain of 8000, it operates at temperatures up to 150 °C. Ideal for applications requiring high collector current and transition frequency up to 200MHz in small signal circuits.

Median Price

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Lifecycle Status

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1k+

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Vyrian

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Digiode

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AZTECH Wire

Italy . 807 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Kulean Microsystems

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Problanco Electronics

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Corphita

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Native Components

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SupplyDigital Components

Austria . 650 parts In-Stock

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UHIMA Technologies

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TANS Electronics

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Northwest PG Solutions

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Corohmni

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Overview

Enhance your electronic projects with the BC372G Small Signal BJT from Onsemi. Known for its high-quality manufacturing, Onsemi delivers reliable and efficient components that exceed industry standards. This NPN Darlington transistor is versatile and ideal for a wide range of applications. With a maximum collector-emitter voltage of 100V and a minimum DC current gain of 8000, this transistor offers superior performance and durability. Upgrade your designs with the BC372G and experience the value and benefits it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a durable and lightweight housing for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor versatile for different electronic projects.

Configuration: DARLINGTON

Darlington configuration offers high current gain and increased sensitivity, making it ideal for applications requiring high amplification.

Maximum Power Dissipation (Abs): 0.625 W

With a high power dissipation capability, this transistor can handle significant power levels without overheating.

Minimum DC Current Gain (hFE): 8000

The high DC current gain ensures efficient signal amplification and performance in various electronic circuits.

Maximum Operating Temperature: 150 °C

Can operate at elevated temperatures without compromising performance, suitable for applications where temperature fluctuations may occur.

Maximum Collector-Emitter Voltage: 100 V

With a high collector-emitter voltage rating, this transistor can handle high voltages, enhancing its versatility in different circuit designs.

Maximum Collector Current (IC): 1 A

Capable of handling high collector currents, making it suitable for applications requiring power switching and amplification.

Nominal Transition Frequency (fT): 200 MHz

High transition frequency allows for faster switching speeds, making this transistor suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC372G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

8000

JEDEC-95 Code:

TO-226AA

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC372G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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