Loading...

BC373RLRM

Onsemi

BC373RLRM by Onsemi

BC373RLRM by Onsemi is a NPN Darlington transistor with hFE of 8000, IC of 1A, and fT of 200MHz. Ideal for applications requiring high current gain and frequency response in small signal amplification circuits. Package style is cylindrical with through-hole terminals for easy mounting.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,512 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,512

-

-

-

-

Digiode

USA . 441 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

441

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TANS Electronics

Latvia . 7,416 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,416

-

-

-

-

Kulean Microsystems

USA . 6,331 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,331

-

-

-

-

Problanco Electronics

Mexico . 6,249 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,249

-

-

-

-

SupplyDigital Components

Austria . 3,362 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,362

-

-

-

-

Corphita

USA . 2,446 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,446

-

-

-

-

Northwest PG Solutions

USA . 969 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

969

-

-

-

-

UHIMA Technologies

Türkiye . 968 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

968

-

-

-

-

Native Components

USA . 665 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

665

-

-

-

-

Corohmni

South Africa . 158 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

158

-

-

-

-

Overview

Upgrade your electronic projects with the BC373RLRM from Onsemi, a top-tier manufacturer known for quality and reliability. This Small Signal Bipolar Junction Transistor (BJT) offers high DC current gain and a fast transition frequency, making it ideal for a wide range of applications. Whether you're working on amplifiers, oscillators, or switching circuits, this NPN Darlington transistor delivers exceptional performance in a durable package. Trust Onsemi to provide the innovative solutions you need to bring your designs to life.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits and are easy to work with, making this product versatile.

Configuration: DARLINGTON

Darlington configuration offers high current gain, making this transistor suitable for applications requiring high amplification.

Package Shape: ROUND

The round shape allows for easy installation and integration into circuit designs.

No. of Terminals: 3

Having 3 terminals provides flexibility in circuit connections and allows for diverse application possibilities.

Minimum DC Current Gain (hFE): 8000

A high value of DC current gain ensures efficient amplification and signal processing capabilities.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand heat and perform reliably in various conditions.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making this product a durable choice for electronic circuits.

Maximum Collector Current (IC): 1 A

Capable of handling up to 1 ampere of collector current, this transistor is suitable for medium power applications.

Terminal Finish: TIN LEAD

Tin lead finish provides good solderability and protection, ensuring secure connections in circuit assemblies.

Nominal Transition Frequency (fT): 200 MHz

High transition frequency allows for fast signal switching and efficient operation in high-frequency circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC373RLRM attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Configuration:

Minimum DC Current Gain (hFE):

8000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC373RLRM Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20