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BC375-AMMO

NXP Semiconductors

BC375-AMMO by NXP Semiconductors

BC375-AMMO by NXP Semiconductors is a single NPN BJT designed for amplifier applications. It features a max VCEsat of 0.4V, a collector current of 1A, and operates up to 150 °C. Its cylindrical plastic package ensures reliable performance in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,689 parts In-Stock

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3,689

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Digiode

USA . 1,606 parts In-Stock

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1,606

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Anansix

USA . 600 parts In-Stock

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600

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One Stop Electronics

USA . 1,269 parts In-Stock

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$49.050

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1,269

$49.050

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UNI Independent Distributors

Spain . 3,394 parts In-Stock

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3,394

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Corphita

USA . 2,963 parts In-Stock

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2,963

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Northwest PG Solutions

USA . 1,466 parts In-Stock

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1,466

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Native Components

USA . 107 parts In-Stock

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Overview

Unlock the potential of your electronic projects with the BC375-AMMO from NXP Semiconductors, a trusted leader in innovative semiconductor solutions. This high-quality NPN transistor is designed for amplifying applications, ensuring reliability and superior performance even in demanding environments. With its robust build and exceptional gain, the BC375-AMMO empowers engineers and hobbyists alike to elevate their designs, providing unmatched value and efficiency for all your circuitry needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, providing good insulation and protection against environmental factors.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this device versatile for various circuits.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, particularly in applications where space and PCB area are considerations.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this transistor is ideal for audio and RF signal processing applications.

Maximum VCEsat: 0.4 V

A low VCEsat means reduced power loss during operation, enhancing efficiency in amplifier circuits.

Package Shape: ROUND

The round package shape allows for easy integration into various circuit designs and helps with efficient thermal dissipation.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical support and make soldering easier, ensuring robust connections.

No. of Terminals: 3

Three terminals facilitate straightforward connections for collector, emitter, and base, simplifying circuit architecture.

Package Style (Meter): CYLINDRICAL

Cylindrical packaging is often preferred for applications requiring a compact footprint, while allowing for good thermal performance.

Minimum DC Current Gain (hFE): 50

A minimum hFE of 50 ensures reliable amplification, making it suitable for low-power signal applications.

Maximum Operating Temperature: 150 °C

The high operating temperature threshold makes this transistor suitable for use in demanding environments without risk of failure.

Maximum Collector-Emitter Voltage: 30 V

A maximum voltage rating of 30 V allows this transistor to be used in various applications without exceeding its voltage limits.

Transistor Element Material: SILICON

Silicon is a standard material for BJTs, ensuring reliability, consistency, and performance in electronic applications.

Maximum Collector Current (IC): 1 A

A collector current capability of 1 A enables this transistor to handle significant loads in amplifying circuits effectively.

Terminal Position: BOTTOM

Bottom terminal positioning optimizes space on PCBs and enhances layout flexibility, beneficial for complex designs.

Nominal Transition Frequency (fT): 150 MHz

A transition frequency of 150 MHz allows for operation in high-frequency applications, making it suitable for RF circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC375-AMMO attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.4 V

Trade Compliance

BC375-AMMO Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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