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BC373ZL1

Onsemi

BC373ZL1 by Onsemi

BC373ZL1 by Onsemi is a NPN Darlington transistor with 3 terminals. It has a min DC current gain of 8000 and can handle a max collector-emitter voltage of 80V. Ideal for amplifier applications, this transistor operates at temperatures up to 150 °C and has a peak reflow temperature of 235°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 1,311 parts In-Stock

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J2 Sourcing AB

Sweden . 210 parts In-Stock

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Vyrian

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Corohmni

South Africa . 71 parts In-Stock

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$1.878

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Kulean Microsystems

USA . 6,864 parts In-Stock

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SupplyDigital Components

Austria . 5,864 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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TANS Electronics

Latvia . 2,574 parts In-Stock

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Problanco Electronics

Mexico . 2,029 parts In-Stock

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Northwest PG Solutions

USA . 1,200 parts In-Stock

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Corphita

USA . 854 parts In-Stock

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Native Components

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UHIMA Technologies

Türkiye . 72 parts In-Stock

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Overview

Experience the power of high-quality performance with the BC373ZL1 by Onsemi. As a top manufacturer in the industry, Onsemi delivers excellence in small signal bipolar junction transistors. Ideal for amplifier applications, this NPN Darlington transistor offers customers superior value and benefits. With a maximum power dissipation of 0.625 W and a minimum DC current gain of 8000, the BC373ZL1 ensures reliable operation at an affordable price point. Trust Onsemi to provide cutting-edge technology that meets your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good thermal and electrical insulation, making the transistor durable and suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN type transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: DARLINGTON

Darlington configuration offers high current gain and allows for high sensitivity and accuracy in amplification circuits.

Maximum Power Dissipation (Abs): 0.625 W

The high power dissipation capability ensures the transistor can handle significant power levels without overheating.

Minimum DC Current Gain (hFE): 8000

With a high DC current gain, this transistor is efficient in amplifying small signals with minimal input power.

Maximum Collector-Emitter Voltage: 80 V

The high collector-emitter voltage rating allows for greater voltage handling capacity, making the transistor versatile in different circuits.

Maximum Collector Current (IC): 1 A

A high collector current rating enables the transistor to handle large current flows, making it suitable for high-power applications.

Nominal Transition Frequency (fT): 200 MHz

With a high transition frequency, this transistor can operate efficiently at high frequencies, making it ideal for RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC373ZL1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

8000

JEDEC-95 Code:

TO-226AA

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC373ZL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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