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BC372ZL1

Onsemi

BC372ZL1 by Onsemi

BC372ZL1 by Onsemi is a NPN Darlington transistor with hFE of 8000, IC of 1A, and fT of 200MHz. Ideal for applications requiring high current gain and frequency response in small signal amplification circuits. Package style: cylindrical, terminals: through-hole, suitable for various electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 2,082 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1,100 parts In-Stock

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Vyrian

USA . 331 parts In-Stock

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Native Components

USA . 736 parts In-Stock

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TANS Electronics

Latvia . 4,272 parts In-Stock

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SupplyDigital Components

Austria . 4,078 parts In-Stock

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Kulean Microsystems

USA . 2,777 parts In-Stock

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Perfect Parts

USA . 2,464 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 1,100 parts In-Stock

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Problanco Electronics

Mexico . 1,051 parts In-Stock

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UHIMA Technologies

Türkiye . 909 parts In-Stock

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Glotronic Ltd.

UK . 880 parts In-Stock

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Northwest PG Solutions

USA . 521 parts In-Stock

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Corohmni

South Africa . 495 parts In-Stock

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Corphita

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Overview

Elevate your electronic projects with the BC372ZL1 by Onsemi. As a leading manufacturer in small signal bipolar junction transistors, Onsemi delivers top-quality products that guarantee reliable performance. The BC372ZL1, a NPN Darlington transistor with a high DC current gain of 8000, is ideal for a wide range of applications. From amplifiers to switching circuits, this transistor offers superior functionality and efficiency. Trust Onsemi to provide you with cutting-edge technology that exceeds expectations. Experience the difference with the BC372ZL1 and unlock endless possibilities in your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good thermal properties and protection, ensuring durability and reliability in various operating conditions.

Polarity or Channel Type: NPN

Commonly used for amplification and switching applications, offering versatility in circuit design.

Configuration: DARLINGTON

Offers high current gain and low saturation voltage, suitable for high-power applications.

Package Shape: ROUND

Allows for easy mounting and installation in applications with limited space.

Minimum DC Current Gain (hFE): 8000

Indicates high amplification capability, ideal for signal processing and amplification circuits.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for various industrial and automotive applications.

Transistor Element Material: SILICON

Offers excellent electrical properties, ensuring high performance and reliability.

Maximum Collector Current (IC): 1 A

Capable of handling moderate to high power levels, suitable for a wide range of applications.

Nominal Transition Frequency (fT): 200 MHz

Indicates fast switching speeds, ideal for high-frequency applications such as RF amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC372ZL1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

1 A

Configuration:

Minimum DC Current Gain (hFE):

8000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC372ZL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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