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BC373RL1

Onsemi

BC373RL1 by Onsemi

BC373RL1 by Onsemi is a NPN Darlington transistor with max. power dissipation of 0.625W, hFE of 8000, and max. collector-emitter voltage of 80V. Ideal for amplifier applications due to its high gain and operating temperature up to 150 °C in a cylindrical package style.

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TANS Electronics

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SupplyDigital Components

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Kulean Microsystems

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Glotronic Ltd.

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Corphita

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Northwest PG Solutions

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UHIMA Technologies

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Overview

Enhance your electronic projects with the BC373RL1 by Onsemi, a top-quality Small Signal Bipolar Junction Transistor (BJT) that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted industry leader, this NPN Darlington transistor is perfect for amplifier applications. With a maximum power dissipation of 0.625 W and a minimum DC current gain of 8000, this transistor provides superior functionality. Its maximum collector-emitter voltage of 80V and maximum collector current of 1A make it versatile for various projects. Upgrade your designs with the BC373RL1 and experience the benefits of superior quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

Commonly used type in amplification circuits, making it versatile for various applications.

Configuration: DARLINGTON

Provides high current gain and allows for high sensitivity in amplifier circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes, ensuring optimal performance in such applications.

Maximum Power Dissipation (Abs): 0.625 W

Can handle relatively high power levels without overheating, making it reliable in demanding conditions.

Package Shape: ROUND

Compact and easy to mount, saving space in circuit designs.

Terminal Form: THROUGH-HOLE

Simple and sturdy terminal design for easy installation on PCBs.

No. of Terminals: 3

Standard number of terminals for a transistor, allowing for easy connectivity in circuits.

Minimum DC Current Gain (hFE): 8000

High current gain ensures efficient amplification and signal strength in the circuit.

Maximum Operating Temperature: 150 °C

Can operate reliably at high temperatures, suitable for industrial and automotive applications.

Maximum Collector-Emitter Voltage: 80 V

Can handle relatively high voltage levels, ensuring compatibility with a wide range of circuits.

Transistor Element Material: SILICON

Silicon is a commonly used semiconductor material known for its high efficiency and reliability in transistors.

Maximum Collector Current (IC): 1 A

Can handle relatively high current levels, suitable for moderate power applications.

Terminal Finish: TIN LEAD

Provides good conductivity and solderability for reliable connections in circuits.

Terminal Position: BOTTOM

Standard terminal position for easy integration into circuit designs.

Peak Reflow Temperature °C: 235

Can withstand high temperatures during the soldering process, ensuring proper assembly on PCBs.

Nominal Transition Frequency (fT): 200 MHz

High transition frequency allows for high-speed signal processing, suitable for RF and high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC373RL1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

8000

JEDEC-95 Code:

TO-226AA

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC373RL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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