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BC373

Onsemi

BC373 by Onsemi

BC373 by Onsemi is a NPN Darlington transistor with max. power dissipation of 0.625W, hFE of 8000, and max. collector-emitter voltage of 80V. Ideal for amplifier applications due to its high gain and low power consumption in a cylindrical package with through-hole terminals.

Median Price

$0.380

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Electronics Inc.

Canada . 930 parts In-Stock

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$0.380

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$0.290

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$0.250

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930

$0.380

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Chip Stock

USA . 13,842 parts In-Stock

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Digiode

USA . 2,410 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 1,523 parts In-Stock

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Vyrian

USA . 157 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 151 parts In-Stock

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GES GmbH

Germany . 71 parts In-Stock

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ECAB

Sweden . 10 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 4 parts In-Stock

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LittleDiode

UK . 2 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 63 parts In-Stock

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$0.380

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63

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Component Stockers USA

USA . 783 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 15,501 parts In-Stock

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Kulean Microsystems

USA . 5,143 parts In-Stock

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TANS Electronics

Latvia . 4,560 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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Assy Fe

Spain . 3,698 parts In-Stock

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Problanco Electronics

Mexico . 1,838 parts In-Stock

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Northwest PG Solutions

USA . 1,590 parts In-Stock

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Corphita

USA . 1,105 parts In-Stock

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UHIMA Technologies

Türkiye . 844 parts In-Stock

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Native Components

USA . 246 parts In-Stock

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SupplyDigital Components

Austria . 190 parts In-Stock

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Overview

Enhance your electronic projects with the BC373 by Onsemi, a high-quality Small Signal Bipolar Junction Transistor designed for amplifier applications. With a Darlington configuration and NPN polarity, this transistor offers reliable performance and a maximum power dissipation of 0.625 W. Manufactured by Onsemi, a trusted leader in semiconductor technology, the BC373 guarantees superior quality and durability. Explore endless possibilities in electronic design with the BC373, providing customers with unmatched value and exceptional benefits for their projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

Commonly used type of bipolar junction transistor for various applications, making it versatile.

Configuration: DARLINGTON

Darlington configuration allows for high current gain and is ideal for amplifier applications.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes, ensuring optimal performance in amplification circuits.

Package Shape: ROUND

Round shape simplifies installation and mounting of the transistor in various circuits.

Maximum Power Dissipation (Abs): 0.625 W

Can handle relatively high power dissipation, making it suitable for applications where power dissipation can vary.

Minimum DC Current Gain (hFE): 8000

High DC current gain allows for efficient amplification of the input signal.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without risking damage or performance issues.

Maximum Collector-Emitter Voltage: 80 V

Can withstand high collector-emitter voltages, providing flexibility in circuit design.

Maximum Collector Current (IC): 1 A

Can handle relatively high collector currents, making it suitable for various applications.

Nominal Transition Frequency (fT): 200 MHz

High transition frequency allows for high-frequency signal amplification, making it suitable for RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC373 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

8000

JEDEC-95 Code:

TO-226AA

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC373 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

2090-99-538-1666, 2090995381666

NIIN

995381666

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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