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BC373ZL1G

Onsemi

BC373ZL1G by Onsemi

BC373ZL1G by Onsemi is a NPN Darlington transistor with a min DC current gain of 8000, ideal for amplifier applications. It has a max collector-emitter voltage of 80V and can handle a max collector current of 1A. This small signal BJT operates at temperatures up to 150 °C, making it suitable for various electronic circuits.

Median Price

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Lifecycle Status

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In-Stock Inventory

1k+

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Vyrian

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Digiode

USA . 1,309 parts In-Stock

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Problanco Electronics

Mexico . 6,423 parts In-Stock

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SupplyDigital Components

Austria . 5,746 parts In-Stock

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Kulean Microsystems

USA . 4,853 parts In-Stock

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TANS Electronics

Latvia . 3,585 parts In-Stock

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Northwest PG Solutions

USA . 1,425 parts In-Stock

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Corphita

USA . 829 parts In-Stock

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UHIMA Technologies

Türkiye . 735 parts In-Stock

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Corohmni

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Native Components

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Overview

Experience the superior quality and reliability of Onsemi with the BC373ZL1G Small Signal Bipolar Junction Transistor. This NPN Darlington transistor is ideal for amplifier applications, offering a minimum DC current gain of 8000 and a maximum collector current of 1A. With a maximum operating temperature of 150 °C and a peak reflow temperature of 260°C, this transistor provides unmatched performance and durability. Trust Onsemi to deliver cutting-edge technology and innovation in a compact and efficient package, making your projects stand out from the competition.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

Suitable for various amplification applications due to NPN configuration.

Configuration: DARLINGTON

Offers high current gain and low saturation voltage, making it ideal for amplifier circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplifier circuits, ensuring optimal performance in such applications.

Maximum Power Dissipation (Abs): 0.625 W

Can handle high power dissipation levels, making it suitable for demanding applications.

Package Shape: ROUND

Compact and space-saving design, suitable for applications with limited space.

Terminal Form: THROUGH-HOLE

Allows for easy installation and soldering onto PCBs.

No. of Terminals: 3

Simple and straightforward pin configuration for easy integration into circuits.

Minimum DC Current Gain (hFE): 8000

High DC current gain ensures efficient amplification of signals.

Maximum Operating Temperature: 150 °C

Can withstand high temperature environments, ensuring reliable operation in various conditions.

Maximum Collector-Emitter Voltage: 80 V

Suitable for applications requiring higher voltage handling capabilities.

Transistor Element Material: SILICON

Provides better performance and reliability compared to other materials.

Maximum Collector Current (IC): 1 A

Can handle high collector current levels, suitable for applications requiring high power output.

Terminal Finish: TIN SILVER COPPER

Provides good conductivity and solderability, ensuring reliable electrical connections.

Terminal Position: BOTTOM

Allows for easy mounting and connection in a circuit.

Peak Reflow Temperature °C: 260

Can withstand high temperatures during reflow soldering process, ensuring proper solder joints.

Nominal Transition Frequency (fT): 200 MHz

High transition frequency allows for fast switching speeds, suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC373ZL1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

8000

JEDEC-95 Code:

TO-226AA

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC373ZL1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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