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2N3904TAR

Onsemi

2N3904TAR by Onsemi

2N3904TAR by Onsemi is a NPN BJT transistor with max. power dissipation of 0.35W, hFE of 30, and fT of 300MHz. Ideal for switching applications due to its max. collector-emitter voltage of 40V and max. collector current of 0.2A. Package style is cylindrical with through-hole terminals.

Median Price

$0.052

Lifecycle Status

Suppliers In-Stock

33

In-Stock Inventory

1k+

Distributors (Authorized)

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Adafruit Industries

USA . 50 parts In-Stock

1+ parts

$0.077

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$0.073

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$0.077

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Farnell

UK . 4,579 parts In-Stock

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$0.163

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$0.047

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Newark

USA . 8,188 parts In-Stock

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$0.283

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8,188

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$0.116

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Mouser Electronics

USA . 12,486 parts In-Stock

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Rochester

USA . 224,509 parts In-Stock

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Arrow

USA . 118,000 parts In-Stock

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Verical

USA . 118,000 parts In-Stock

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RS (Exports)

UK . 22,000 parts In-Stock

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Chip1Stop

Japan . 16,007 parts In-Stock

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DigiKey

USA . 10,974 parts In-Stock

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Master Electronics

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Element14

Singapore . 9,138 parts In-Stock

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Distributors (In-Stock)

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Digiode

USA . 243 parts In-Stock

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$0.034

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DF Sales Co.

USA . 850 parts In-Stock

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DF Sales Co.

USA . 850 parts In-Stock

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Nova Conductors

Japan . 28 parts In-Stock

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IBS Electronics

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Vyrian

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NAC Semi

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Chip Stock

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Electro Sonic

Canada . 20,000 parts In-Stock

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Diverse Electronics

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ComSIT Distribution GmbH

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Jameco Electronics

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ACDS - Activité Composants Distribution Service

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Flip Electronics

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Bristol Electronics

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Holdelec - ElecDif-Pro

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Cyclops Electronics Ltd

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Connector Distribution Corp

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Semicontronic

India . 99,003 parts In-Stock

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Corphita

USA . 1,657 parts In-Stock

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Argo Parts USA

USA . 2,272 parts In-Stock

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Advanced Electronics

New Zealand . 100 parts In-Stock

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Modulus Dynamics

Lithuania . 67 parts In-Stock

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Component Stockers USA

USA . 119,686 parts In-Stock

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$0.090

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$0.060

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Continental Prestige Electronics

USA . 1,803 parts In-Stock

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$0.326

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$0.130

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$0.045

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$0.038

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Corohmni

South Africa . 777 parts In-Stock

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$0.369

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Aztec Data Supply Inc.

USA . 2,095 parts In-Stock

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$1.720

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Perfect Parts

USA . 31,528 parts In-Stock

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Allen Electronics Distributors

USA . 22,000 parts In-Stock

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Kepictronics

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Authorized Procurement Solutions

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QUARKTWIN TECHNOLOGY LTD

USA . 18,702 parts In-Stock

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Metaverse IC Inc.

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S.R.D Solutions

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TANS Electronics

Latvia . 5,008 parts In-Stock

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SupplyDigital Components

Austria . 4,000 parts In-Stock

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iodParts Technologies Inc.

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Cyclops Electronics Ltd (Excess)

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Glotronic Ltd.

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Kulean Microsystems

USA . 2,915 parts In-Stock

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Supply Digital

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Netroflash

USA . 2,000 parts In-Stock

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$0.097

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UHIMA Technologies

Türkiye . 870 parts In-Stock

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Problanco Electronics

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Robosynatics

Brazil . 450 parts In-Stock

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Lucentia Tech

USA . 450 parts In-Stock

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$1.341

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$1.341

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$1.341

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$1.341

Overview

Enhance the performance of your electronic projects with the 2N3904TAR by Onsemi. As a leading manufacturer in the industry, Onsemi offers top-quality Small Signal Bipolar Junction Transistors (BJTs) like the 2N3904TAR, perfect for switching applications. With a maximum power dissipation of 0.35W and a maximum collector-emitter voltage of 40V, this NPN transistor provides outstanding reliability and efficiency. Whether you're working on amplifiers, oscillators, or other electronics, the 2N3904TAR delivers exceptional value, making it a must-have component for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this transistor versatile.

Configuration: SINGLE

Simplifies circuit design and integration with other components.

Transistor Application: SWITCHING

Designed for efficient switching operations, ideal for electronic circuits that require fast on/off transitions.

No. of Terminals: 3

Simple and straightforward connectivity for circuit connections.

Maximum Power Dissipation (Abs): 0.35 W

Able to handle moderate power levels without overheating, ensuring reliable performance.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments without performance degradation.

Maximum Collector-Emitter Voltage: 40 V

Suitable for applications with moderate voltage requirements.

Maximum Collector Current (IC): 0.2 A

Capable of handling moderate current levels, making it suitable for various circuit designs.

Nominal Transition Frequency (fT): 300 MHz

Enables high-frequency operation, suitable for applications where speed is crucial.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N3904TAR attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

250 ns

Maximum Turn On Time (ton):

70 ns

Trade Compliance

2N3904TAR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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