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MPSA12RLRA

Onsemi

MPSA12RLRA by Onsemi

MPSA12RLRA by Onsemi is a NPN Darlington BJT with hFE of 20000, VCE of 20V, and IC of 0.3A. It is used in applications requiring high DC current gain and operates up to 150 °C. Ideal for amplification tasks due to its high transition frequency of 100MHz.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Chip Stock

USA . 72,000 parts In-Stock

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Vyrian

USA . 7,778 parts In-Stock

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Digiode

USA . 1,554 parts In-Stock

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AZTECH Wire

Italy . 103 parts In-Stock

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$10.130

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Component Stockers USA

USA . 312 parts In-Stock

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$99.990

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Kulean Microsystems

USA . 6,122 parts In-Stock

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TANS Electronics

Latvia . 4,830 parts In-Stock

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SupplyDigital Components

Austria . 2,504 parts In-Stock

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Problanco Electronics

Mexico . 542 parts In-Stock

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Corohmni

South Africa . 462 parts In-Stock

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UHIMA Technologies

Türkiye . 387 parts In-Stock

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Corphita

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Overview

Discover the unparalleled performance and reliability of the MPSA12RLRA by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Small Signal Bipolar Junction Transistors that are ideal for a wide range of applications. With its NPN polarity and Darlington configuration, this product offers exceptional value to customers seeking high DC current gain and reliable operation at temperatures up to 150 °C. Experience the benefits of Onsemi's advanced technology and trust in the superior quality of the MPSA12RLRA for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material is durable and provides good protection for the transistor, making it suitable for various environments and applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this product versatile and widely applicable.

Configuration: DARLINGTON

The Darlington configuration provides high current gain and low saturation voltage, allowing for efficient and reliable operation in a variety of circuit designs.

Package Shape: ROUND

The round package shape allows for easy installation and mounting of the transistor, making it user-friendly and convenient for assembly.

Minimum DC Current Gain (hFE): 20000

With a high minimum DC current gain, this transistor offers excellent amplification capabilities and ensures stable and consistent performance in circuits.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C indicates that this transistor can withstand elevated temperatures, making it suitable for applications where heat dissipation is a concern.

Maximum Collector-Emitter Voltage: 20 V

The maximum collector-emitter voltage of 20 V allows for safe operation in low voltage applications, providing protection against voltage spikes and overloads.

Transistor Element Material: SILICON

Silicon transistors offer high reliability, low leakage current, and good thermal stability, making them a popular choice for various electronic circuits.

Maximum Collector Current (IC): 0.3 A

With a maximum collector current of 0.3 A, this transistor can handle moderate current levels, making it suitable for many low-power applications.

Nominal Transition Frequency (fT): 100 MHz

The high nominal transition frequency of 100 MHz indicates that this transistor can operate at high frequencies, making it ideal for signal processing and RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSA12RLRA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

20000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSA12RLRA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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