Loading...

2SA1575E-TD-E

Onsemi

2SA1575E-TD-E by Onsemi

Onsemi's 2SA1575E-TD-E is a PNP Darlington transistor with max VCEsat of 1V, hFE of 100, and fT of 400MHz. Ideal for amplifier applications due to its high gain and frequency response capabilities. Suitable for surface mount designs with small outline package style.

Median Price

$0.639

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 261 parts In-Stock

1+ parts

$0.628

100+ parts

$0.591

1k+ parts

$0.534

10k+ parts

-

261

$0.628

$0.591

$0.534

-

DigiKey

USA . 511 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.650

10k+ parts

-

511

-

-

$0.650

-

Chip1Stop

Japan . 27 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

27

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,531 parts In-Stock

1+ parts

$0.597

100+ parts

-

1k+ parts

-

10k+ parts

-

1,531

$0.597

-

-

-

Chip Stock

USA . 59,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

59,000

-

-

-

-

DigiKey Marketplace

USA . 10,761 parts In-Stock

1+ parts

-

100+ parts

$0.650

1k+ parts

-

10k+ parts

-

10,761

-

$0.650

-

-

Vyrian

USA . 8,565 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,565

-

-

-

-

ACDS - Activité Composants Distribution Service

France . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 202 parts In-Stock

1+ parts

$0.526

100+ parts

-

1k+ parts

-

10k+ parts

-

202

$0.526

-

-

-

Ampacity Inc.

Singapore . 29 parts In-Stock

1+ parts

$0.530

100+ parts

-

1k+ parts

-

10k+ parts

-

29

$0.530

-

-

-

Corphita

USA . 2,378 parts In-Stock

1+ parts

$0.565

100+ parts

-

1k+ parts

-

10k+ parts

-

2,378

$0.565

-

-

-

Northwest PG Solutions

USA . 848 parts In-Stock

1+ parts

$0.579

100+ parts

-

1k+ parts

-

10k+ parts

-

848

$0.579

-

-

-

Corohmni

South Africa . 109 parts In-Stock

1+ parts

$0.628

100+ parts

-

1k+ parts

-

10k+ parts

-

109

$0.628

-

-

-

Component Stockers USA

USA . 6,657 parts In-Stock

1+ parts

$0.650

100+ parts

$0.610

1k+ parts

$0.550

10k+ parts

$0.550

6,657

$0.650

$0.610

$0.550

$0.550

Microchip USA

USA . 206 parts In-Stock

1+ parts

$3.900

100+ parts

-

1k+ parts

-

10k+ parts

-

206

$3.900

-

-

-

Continental Prestige Electronics

USA . 10,761 parts In-Stock

1+ parts

-

100+ parts

$0.568

1k+ parts

-

10k+ parts

-

10,761

-

$0.568

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 9,870 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

9,870

-

-

-

-

Perfect Parts

USA . 6,720 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,720

-

-

-

-

TANS Electronics

Latvia . 6,209 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,209

-

-

-

-

Kulean Microsystems

USA . 5,976 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,976

-

-

-

-

Problanco Electronics

Mexico . 5,398 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,398

-

-

-

-

Cyclops Electronics Ltd (Excess)

UK . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

UHIMA Technologies

Türkiye . 771 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

771

-

-

-

-

SupplyDigital Components

Austria . 264 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

264

-

-

-

-

Overview

Unlock unparalleled performance and reliability with the Onsemi 2SA1575E-TD-E Small Signal Bipolar Junction Transistor. Manufactured by industry leader Onsemi, this PNP transistor in a DARLINGTON configuration is designed for amplifier applications, offering a maximum VCEsat of just 1V and a minimum DC current gain of 100. With a compact rectangular package style and surface mount capability, this transistor delivers high performance in a small outline, making it ideal for a wide range of industrial and consumer electronics. Trust Onsemi for superior quality and innovation that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package ensures the transistor is lightweight and durable, making it easy to handle and suitable for various applications.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into circuits that require this specific type of transistor.

Configuration: DARLINGTON

The Darlington configuration provides high current gain and low saturation voltage, making this transistor ideal for amplifier applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier use, this transistor delivers high performance and reliability in amplification circuits.

Surface Mount: YES

The surface mount feature enables easy and efficient PCB assembly, saving space and reducing production costs.

Maximum VCEsat: 1 V

With a low VCEsat value, this transistor minimizes power loss and improves efficiency in the circuit.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy placement on the PCB and efficient use of space.

Terminal Form: FLAT

The flat terminal form ensures secure and reliable connections during installation and operation.

No. of Terminals: 3

The three terminals provide the necessary connections for proper functioning within a circuit.

Maximum Power Dissipation (Abs): 1.3 W

The high power dissipation capacity of 1.3 W ensures the transistor can handle significant power levels without overheating.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and allows for efficient heat dissipation.

Maximum Power Dissipation Ambient: 0.5 W

The maximum ambient power dissipation of 0.5 W ensures stable operation under varying temperature conditions.

Minimum DC Current Gain (hFE): 100

The high minimum DC current gain of 100 ensures reliable amplification performance in the circuit.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this transistor is suitable for a wide range of environmental conditions.

Maximum Collector-Base Capacitance: 2.3 pF

The low collector-base capacitance of 2.3 pF reduces the chances of signal distortion and ensures high-frequency response.

Maximum Collector-Emitter Voltage: 200 V

With a high maximum collector-emitter voltage of 200 V, this transistor can handle higher voltage levels in the circuit.

Transistor Element Material: SILICON

Silicon material provides high performance and reliability in transistor applications, ensuring longevity and consistent functionality.

Maximum Collector Current (IC): 0.1 A

The maximum collector current of 0.1 A allows for handling moderate current levels in the circuit without overheating.

Terminal Finish: Tin/Bismuth (Sn/Bi)

The tin/bismuth terminal finish provides corrosion resistance and ensures long-term electrical performance.

Terminal Position: SINGLE

The single terminal position simplifies installation and connection, making the transistor easy to integrate into circuits.

Case Connection: COLLECTOR

The collector case connection allows for efficient heat dissipation, ensuring the transistor operates within safe temperature limits.

Nominal Transition Frequency (fT): 400 MHz

The high nominal transition frequency of 400 MHz ensures excellent high-frequency response and is suitable for fast-switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SA1575E-TD-E attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

2.3 pF

Maximum Collector-Emitter Voltage:

200 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

.5 W

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Finish:

Tin/Bismuth (Sn/Bi)

Terminal Form:

FLAT

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

1 V

Trade Compliance

2SA1575E-TD-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20